Excellent Selector Characteristics of Nanoscale M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ...
IEEE Electron Device Letters 32 (11), 1579-1581, 2011
346 2011 Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications J Lee, EM Bourim, W Lee, J Park, M Jo, S Jung, J Shin, H Hwang
Applied Physics Letters 97 (17), 2010
191 2010 High Current Density and Nonlinearity Combination of Selection Device Based on TaOx 2 /TaOx W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ...
ACS nano 6 (9), 8166-8172, 2012
171 2012 Ultrathin (<10nm) Nb2 O5 /NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012
121 2012 Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang
Nanotechnology 22 (47), 475702, 2011
120 2011 Multibit Operation of J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang
Electron Device Letters, IEEE 32 (4), 476-478, 2011
116 2011 Excellent Switching Uniformity of Cu-Doped J Yoon, H Choi, D Lee, JB Park, J Lee, DJ Seong, Y Ju, M Chang, S Jung, ...
Electron Device Letters, IEEE 30 (5), 457-459, 2009
107 2009 Co-Occurrence of Threshold Switching and Memory Switching in X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang
IEEE Electron Device Letters 33 (2), 236-238, 2011
97 2011 Resistive-Switching Characteristics of $ hbox {Al}/hbox {Pr} _ {0.7} hbox {Ca} _ {0.3} hbox {MnO} _ {3} $ for Nonvolatile Memory Applications DJ Seong, M Hassan, H Choi, J Lee, J Yoon, JB Park, W Lee, MS Oh, ...
Electron Device Letters, IEEE 30 (9), 919-921, 2009
80 2009 Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ...
Microelectronic Engineering 107, 33-36, 2013
75 2013 Investigation of state stability of low-resistance state in resistive memory J Park, M Jo, EM Bourim, J Yoon, DJ Seong, J Lee, W Lee, H Hwang
IEEE Electron Device Letters 31 (5), 485-487, 2010
69 2010 Self-Selective Characteristics of Nanoscale M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ...
IEEE electron device letters 33 (5), 718-720, 2012
66 2012 Effect of Scaling S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ...
IEEE electron device letters 32 (5), 671-673, 2011
65 2011 Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7 Ca0.3 MnO3 device for nonvolatile … D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
54 2009 Noise-Analysis-Based Model of Filamentary Switching ReRAM With D Lee, J Lee, M Jo, J Park, M Siddik, H Hwang
Electron Device Letters, IEEE, 1-3, 2011
50 2011 International electron devices meeting CH Lee, KI Choi, MK Cho, YH Song, KC Park, K Kim
Technical Digest (Cat. No. 07CH37934)(IEEE, Piscataway, NJ, 2007), 771-774, 2010
48 2010 Improved switching uniformity and speed in filament-type RRAM using lightning rod effect J Park, M Jo, J Lee, S Jung, S Kim, W Lee, J Shin, H Hwang
IEEE electron device letters 32 (1), 63-65, 2010
48 2010 Quantized conductive filament formed by limited Cu source in sub-5nm era J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ...
2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011
46 2011 Resistive switching characteristics of ultra-thin TiOx J Park, S Jung, J Lee, W Lee, S Kim, J Shin, H Hwang
Microelectronic Engineering, 2011
46 2011 Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices S Kim, D Lee, J Park, S Jung, W Lee, J Shin, J Woo, G Choi, H Hwang
Nanotechnology 23 (32), 325702, 2012
44 2012