Prospects for LED lighting S Pimputkar, JS Speck, SP DenBaars, S Nakamura
Nature photonics 3 (4), 180-182, 2009
2394 2009 Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces D Leonard, M Krishnamurthy, CM Reaves, SP DenBaars, PM Petroff
Applied Physics Letters 63 (23), 3203-3205, 1993
2381 1993 Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening T Fujii, Y Gao, R Sharma, EL Hu, SP DenBaars, S Nakamura
Applied physics letters 84 (6), 855-857, 2004
1792 2004 Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
1446 2000 Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ...
Applied physics letters 68 (5), 643-645, 1996
1102 1996 Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied physics letters 71 (18), 2572-2574, 1997
965 1997 “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ...
Applied Physics Letters 73 (10), 1370-1372, 1998
879 1998 Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
844 2006 Structural characterization of nonpolar a -plane GaN thin films grown on r -plane sapphire MD Craven, SH Lim, F Wu, JS Speck, SP DenBaars
Applied Physics Letters 81 (3), 469-471, 2002
671 2002 Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
617 1999 AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
614 2001 Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ...
Applied Physics Letters 72 (6), 692-694, 1998
610 1998 Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura
US Patent 8,148,713, 2012
604 2012 High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
602 2005 Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ...
Applied Physics Letters 73 (14), 2006-2008, 1998
581 1998 Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ...
Journal of applied physics 80 (6), 3228-3237, 1996
567 1996 High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 27 (9), 713-715, 2006
562 2006 High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 2008
537 2008 Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck
Journal of applied physics 82 (11), 5472-5479, 1997
530 1997 Enhanced light extraction in LEDs through the use of internal and external optical elements B Thibeault, M Mack, S DenBaars
US Patent 6,657,236, 2003
528 2003 