| Monolithic integration of lateral HV power MOSFET with LV CMOS for SiC power IC technology SB Isukapati, H Zhang, T Liu, E Ashik, B Lee, AJ Morgan, W Sung, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 33 | 2021 |
| Microstructure and optical properties of sputter-deposited Ga2O3 films E Vega, SB Isukapati, TN Oder Journal of Vacuum Science & Technology A 39 (3), 2021 | 29 | 2021 |
| Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications SB Isukapati, AJ Morgan, W Sung, H Zhang, T Liu, A Fayed, AK Agarwal, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 14 | 2021 |
| Impact of charge balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes JT Kemmerling, R Guan, M Sadek, S Isukapati, W Sung, SW Han, R Chu IEEE Electron Device Letters 43 (5), 701-704, 2022 | 9 | 2022 |
| Edge Termination and Peripheral Designs for SiC High-Voltage (HV) Lateral MOSFETs for Power IC Technology SB Isukapati, AJ Morgan, W Sung 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 7 | 2022 |
| Spice modeling and circuit demonstration of a sic power ic technology T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ... IEEE Journal of the Electron Devices Society 10, 129-138, 2022 | 7 | 2022 |
| Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes TN Oder, KC Kundeti, N Borucki, SB Isukapati AIP Advances 7 (12), 2017 | 7 | 2017 |
| GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching JT Kemmerling, R Guan, M Sadek, Y Xiong, J Song, SW Han, S Isukapati, ... IEEE Transactions on Electron Devices, 2024 | 6 | 2024 |
| SPICE modeling and CMOS circuit development of a SiC power IC technology T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ... 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS …, 2021 | 6 | 2021 |
| Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs D Kim, S DeBoer, SA Mancini, SB Isukapati, J Lynch, N Yun, AJ Morgan, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | 4 | 2023 |
| Gallium oxide thin films for optoelectronic applications SB Isukapati Youngstown State University, 2018 | 4 | 2018 |
| First Demonstration of 600 V 4H-SiC Lateral Bi-Directional Metal-Oxide-Semiconductor Field-Effect Transistor (LBiDMOS) SY Jang, SB Isukapati, D Kim, W Sung 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 3 | 2023 |
| Area-Efficient High-Voltage (HV) Lateral MOSFETs for Discrete Device Development and Power IC Integration SB Isukapati, SY Jang, W Sung 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 3 | 2022 |
| A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology H Zhang, T Liu, U Gupta, SB Isukapati, E Ashik, AJ Morgan, B Lee, ... 2022 IEEE 65th International Midwest Symposium on Circuits and Systems …, 2022 | 3 | 2022 |
| Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET) SY Jang, SB Isukapati, J Lynch, W Sung 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 3 | 2021 |
| Bias Temperature Instability on SiC n-and p-MOSFETs for High Temperature CMOS Applications EK Ashik, SB Isukapati, H Zhang, T Liu, U Gupta, AJ Morgan, V Misra, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 3B. 4-1-3B. 4-8, 2022 | 2 | 2022 |
| An Efficient Design Approach to Optimize the Drift Layer of Unipolar Power Devices in 4H-SiC SB Isukapati, W Sung IEEE Journal of the Electron Devices Society 8, 176-181, 2020 | 2 | 2020 |
| Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs SB Isukapati, H Zhang, T Liu, U Gupta, E Ashik, AJ Morgan, SY Jang, ... Materials Science in Semiconductor Processing 169, 107921, 2024 | 1 | 2024 |
| Enhanced Design Architecture to Suppress Leakage Current of High-Voltage (HV) Lateral nMOSFETs in 4H-SiC SB Isukapati, SY Jang, W Sung 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 1 | 2023 |
| Device Performance and Reliability of SiC CMOS up to 400° C EK Ashik, SB Isukapati, H Zhang, TS Liu, U Gupta, AJ Morgan, V Misra, ... Scientific Books of Abstracts 8, 211-212, 2024 | | 2024 |
Adam J MorganNoMIS Power & SUNY RFEmail verificata su nomispower.com
