| A polarization-induced 2D hole gas in undoped gallium nitride quantum wells R Chaudhuri, SJ Bader, Z Chen, DA Muller, HG Xing, D Jena Science 365 (6460), 1454-1457, 2019 | 148 | 2019 |
| High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs A Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D Jena IEEE Electron Device Letters 40 (8), 1293-1296, 2019 | 120 | 2019 |
| Prospects for wide bandgap and ultrawide bandgap CMOS devices SJ Bader, H Lee, R Chaudhuri, S Huang, A Hickman, A Molnar, HG Xing, ... IEEE Transactions on Electron Devices 67 (10), 4010-4020, 2020 | 106 | 2020 |
| Next generation electronics on the ultrawide-bandgap aluminum nitride platform AL Hickman, R Chaudhuri, SJ Bader, K Nomoto, L Li, JCM Hwang, ... Semiconductor Science and Technology 36 (4), 044001, 2021 | 85 | 2021 |
| Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas SJ Bader, R Chaudhuri, K Nomoto, A Hickman, Z Chen, HW Then, ... IEEE Electron Device Letters 39 (12), 1848-1851, 2018 | 85 | 2018 |
| First RF power operation of AlN/GaN/AlN HEMTs with> 3 A/mm and 3 W/mm at 10 GHz A Hickman, R Chaudhuri, L Li, K Nomoto, SJ Bader, JCM Hwang, ... IEEE Journal of the Electron Devices Society 9, 121-124, 2020 | 60 | 2020 |
| Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN J Casamento, J Wright, R Chaudhuri, HG Xing, D Jena Applied Physics Letters 115 (17), 2019 | 49 | 2019 |
| GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020 | 37 | 2020 |
| GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current SJ Bader, R Chaudhuri, A Hickman, K Nomoto, S Bharadwaj, HW Then, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2019 | 32 | 2019 |
| Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures J Singhal, R Chaudhuri, A Hickman, V Protasenko, HG Xing, D Jena APL Materials 10 (11), 2022 | 29 | 2022 |
| Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas SJ Bader, R Chaudhuri, MF Schubert, HW Then, HG Xing, D Jena Applied Physics Letters 114 (25), 2019 | 27 | 2019 |
| Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, R Chaudhuri, Y Cho, V Protasenko, K Nomoto, ... Applied Physics Letters 119 (16), 2021 | 23 | 2021 |
| 15-ghz epitaxial aln fbars on sic substrates W Zhao, MJ Asadi, L Li, R Chaudhuri, K Nomoto, HG Xing, JCM Hwang, ... IEEE Electron Device Letters 44 (6), 903-906, 2023 | 22 | 2023 |
| GaN-based multi-channel transistors with lateral gate for linear and efficient millimeter-wave power amplifiers K Shinohara, C King, EJ Regan, J Bergman, AD Carter, A Arias, ... 2019 IEEE MTT-S International Microwave Symposium (IMS), 1133-1135, 2019 | 21 | 2019 |
| High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers R Chaudhuri, Z Chen, DA Muller, HG Xing, D Jena Journal of Applied Physics 130 (2), 2021 | 18 | 2021 |
| Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells H Condori Quispe, SM Islam, S Bader, A Chanana, K Lee, R Chaudhuri, ... Applied Physics Letters 111 (7), 2017 | 16 | 2017 |
| In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors R Chaudhuri, A Hickman, J Singhal, J Casamento, HG Xing, D Jena physica status solidi (a) 219 (4), 2100452, 2022 | 14 | 2022 |
| X-band epi-BAW resonators W Zhao, MJ Asadi, L Li, R Chaudhuri, K Nomoto, HG Xing, J Hwang, ... Journal of Applied Physics 132 (2), 2022 | 12 | 2022 |
| Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures R Chaudhuri, Z Zhang, HG Xing, D Jena Advanced Electronic Materials 8 (5), 2101120, 2022 | 12 | 2022 |
| Molecular beam epitaxy growth of large‐area GaN/AlN 2D hole gas heterostructures R Chaudhuri, SJ Bader, Z Chen, D Muller, HG Xing, D Jena physica status solidi (b) 257 (4), 1900567, 2020 | 10 | 2020 |
Huili Grace XingProf. of ECE & MSE, Cornell UniversityEmail verificata su cornell.edu