Radiation effects in MOS oxides JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ...
IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008
1026 2008 Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ...
Journal of Applied Physics 73 (10), 5058-5074, 1993
618 1993 'Border traps' in MOS devices DM Fleetwood
IEEE transactions on nuclear science 39 (2), 269-271, 1992
486 1992 Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices DM Fleetwood
IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013
396 2013 Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
376 1994 Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
295 2002 1/f noise and radiation effects in MOS devices DM Fleetwood, TL Meisenheimer, JH Scofield
IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994
266 1994 Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes
IEEE transactions on nuclear science 38 (6), 1187-1194, 1991
265 1991 Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments DM Fleetwood, PS Winokur, JR Schwank
IEEE Transactions on Nuclear Science 35 (6), 1497-1505, 1988
262 1988 Defect generation by hydrogen at the Si-SiO 2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
245 2001 An overview of high-temperature electronic device technologies and potential applications PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian
IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994
242 1994 Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
238 2002 Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE transactions on nuclear science 40 (6), 1276-1285, 1993
238 1993 ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood
IEEE Transactions on Nuclear Science 56 (4), 1894-1908, 2009
235 2009 Border traps: Issues for MOS radiation response and long-term reliability DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ...
Microelectronics Reliability 35 (3), 403-428, 1995
227 1995 1/f noise and defects in microelectronic materials and devices DM Fleetwood
IEEE Transactions on Nuclear Science 62 (4), 1462-1486, 2015
215 2015 Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
212 2002 Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling DM Fleetwood
IEEE Transactions on Nuclear Science 65 (8), 1465-1481, 2017
204 2017 Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors DM Fleetwood, JH Scofield
Physical review letters 64 (5), 579, 1990
203 1990 Non-volatile memory device based on mobile protons in SiO2 thin films K Vanheusden, WL Warren, RAB Devine, DM Fleetwood, JR Schwank, ...
Nature 386 (6625), 587-589, 1997
201 1997 
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityEmail verificata su vanderbilt.edu
