| Effect of Silicon Doping in B–Te (B4Te6) Binary Ovonic Threshold Switch System S Ban, S Lee, J Lee, H Hwang IEEE Electron Device Letters 43 (4), 643-646, 2022 | 18 | 2022 |
| Pulse dependent threshold voltage variation of the ovonic threshold switch in cross-point memory S Ban, H Choi, W Lee, S Hong, H Zang, B Lee, M Kim, S Lee, H Lee, ... IEEE Electron Device Letters 41 (3), 373-376, 2020 | 17 | 2020 |
| Defect Engineering of BTe Ovonic Threshold Switch (OTS) with Nitrogen Doping for Improved Electrical and Reliability Performance J Lee, S Ban, TH Lee, H Hwang IEEE Electron Device Letters, 2023 | 6 | 2023 |
| Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics J Lee, S Kim, S Lee, S Ban, S Heo, D Lee, O Mosendz, H Hwang 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 5 | 2022 |
| Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device J Lee, Y Seo, S Ban, DG Kim, YB Park, TH Lee, H Hwang IEEE Transactions on Electron Devices, 2024 | 4 | 2024 |
| Enhancing Se-based Selector-only Memory with Ultra-fast Write Speed (~ 10 ns) and Superior Retention Characteristics (> 10 years at RT) via Material Design and UV Treatment … J Lee, Y Seo, S Ban, D Kim, S Heo, D Kang, H Hwang 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 4 | 2023 |
| Relaxation oscillation effect of the ovonic threshold switch on the SET characteristics of phase-change memory in cross-point structure SM Hong, M Kim, S Lee, SH Ban, H Zang, H Choi, T Kim IEEE Electron Device Letters 42 (12), 1759-1761, 2021 | 4 | 2021 |
| A technique for the non-destructive EUV mask sidewall angle measurement using scanning electron microscope S Lee, J Lee, S Ban, HK Oh, B Nam, S Kim, D Yim, O Kim Journal of Nanoscience and Nanotechnology 13 (12), 8032-8035, 2013 | 4 | 2013 |
| Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications S Ban, J Lee, T Kim, H Hwang 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 3 | 2023 |
| Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change Dynamics D Kim, JT Jang, C Kim, HW Kim, E Hong, S Ban, M Shin, H Lee, HD Lee, ... IEEE Transactions on Electron Devices 70 (2), 514-520, 2022 | 3 | 2022 |
| Improving the selector characteristics of ovonic threshold switch via UV treatment process Y Seo, J Lee, S Ban, D Kim, G Han, H Hwang Applied Physics Letters 123 (24), 2023 | 2 | 2023 |
| Chalcogenide material, variable resistance memory device and electronic device GS Jung, SH Ban, JK Ahn, BS Lee, YH Lee, WT Lee, JH Lee, HJ Zang, ... US Patent 11,707,005, 2023 | 2 | 2023 |
| Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device S Heo, D Kim, W Choi, S Ban, O Kwon, H Hwang 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
| Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents D Kim, JT Jang, C Kim, HW Kim, E Hong, S Ban, M Shin, H Lee, HD Lee, ... IEEE Transactions on Electron Devices 70 (2), 521-526, 2022 | 2 | 2022 |
| A physics-based compact model of phase change for the design of cross-point storage-class memories D Kim, JT Jang, DM Kim, SJ Choi, S Ban, M Shin, H Lee, HD Lee, HS Mo, ... Solid-State Electronics 185, 107955, 2021 | 2 | 2021 |
| Electronic device and method of operating memory cell in the electronic device SH Ban, BS Lee, WT Lee, TH Kim, HJ Zang, HJ Choi US Patent 10,825,519, 2020 | 2 | 2020 |
| Electronic device using resistive memory element and a recovery operation to compensate for threshold drift LEE Woo-Tae, S Hong, T Kim, SH Ban, HJ Choi US Patent 10,115,461, 2018 | 2 | 2018 |
| Subthreshold Bias-Induced Threshold Voltage Shift of the Ovonic Threshold Switch S Ban, J Lee, Y Seo, O Kwon, W Lee, T Kim, H Hwang IEEE Electron Device Letters, 2023 | 1 | 2023 |
| Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array S Ban, J Lee, T Kim, H Hwang IEEE Transactions on Electron Devices 70 (3), 1034-1041, 2023 | 1 | 2023 |
| A physics-based compact model for phase-change memory considering the ratio of vertical-to-lateral crystal growth rate for the design of cross-point storage-class memory D Kim, J Tae Jang, D Myong Kim, SJ Choi, S Ban, M Shin, H Lee, ... Solid State Electronics 185, 107955, 2021 | 1 | 2021 |