Axel Hoffmann

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Bruno K MeyerJustus Liebig University GiessenEmail verificata su mailbox.tu-berlin.de
juergen christenProfessor of Physics, Magdeburg UniversityEmail verificata su ovgu.de
Christian ThomsenTU BerlinEmail verificata su tu-berlin.de
Markus R. WagnerPaul-Drude-Institut für FestkörperelektronikEmail verificata su pdi-berlin.de
Gordon CallsenUniversity of Bremen, Institute of Solid State PhysicsEmail verificata su ifp.uni-bremen.de
Nikolay LedentsovVI Systems GmbHEmail verificata su v-i-systems.com
Ronny KirsteResearch associate, NCSUEmail verificata su ncsu.edu
Matthew R. PhillipsEmeritus Professor of Applied Physics, University of Technology SydneyEmail verificata su uts.edu.au
Sebastian ReparazINSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONAEmail verificata su icmab.es
Christian NenstielTechnische Universität BerlinEmail verificata su physik.tu-berlin.de
Sergey MaksimenkoBelarusian State University, Research Institute for Nuclear Problems, DirectorEmail verificata su bsu.by
Dagmar GerthsenKITEmail verificata su kit.edu
Kazumasa HiramatsuMie University, Emeritus ProfessoreEmail verificata su elec.mie-u.ac.jp
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateEmail verificata su ncsu.edu
Wolfgang GehlhoffProf. Dr., Technische Universität BerlinEmail verificata su sol.physik.tu-berlin.de
Dietz NikolausGeorgia State UniversityEmail verificata su gsu.edu
Anna RodinaChief Scientist, Ioffe InstituteEmail verificata su mail.ioffe.ru
Andrei SchliwaPrincipal Scientist @ Technische Universität BerlinEmail verificata su tu-berlin.de
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)Email verificata su nuee.nagoya-u.ac.jp
Ramon CollazoProfessor of Materials Science and Engineering, NCSUEmail verificata su ncsu.edu

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Axel Hoffmann

Institute of Solid State Physics, Technical University of Berlin

Email verificata su tu-berlin.de - Home page

Semiconductor physics Nanostructures Devices


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004	2005	2004
Zinc Oxide: From Fundamental Properties Towards Novel Applications CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts Springer, 2010	775	2010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ... Physical Review B 56 (16), 10435, 1997	636	1997
Group III nitride semiconductor compounds: physics and applications Clarendon Press, 1998	567*	1998
Nitrogen-related local vibrational modes in ZnO: N A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ... Applied Physics Letters 80 (11), 1909-1911, 2002	557	2002
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ... Applied physics letters 80 (2), 210-212, 2002	395	2002
Zone-boundary phonons in hexagonal and cubic GaN H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ... Physical Review B 55 (11), 7000, 1997	392	1997
Properties of the yellow luminescence in undoped GaN epitaxial layers DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ... Phys. Rev. B 72 (23), 16702, 1995	326	1995
Development of advanced high heat flux and plasma-facing materials C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ... Nuclear Fusion 57 (9), 092007, 2017	323	2017
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998	321	1998
Exciton fine structure in undoped GaN epitaxial films D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ... Physical Review B 53 (24), 16543, 1996	249	1996
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011	246	2011
High Si and Ge n-type doping of GaN doping-Limits and impact on stress S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ... Applied Physics Letters 100 (12), 2012	238	2012
Semiconductor nanostructures D Bimberg Springer, 2008	236	2008
Free excitons in wurtzite GaN AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ... Physical Review B 64 (11), 115204, 2001	222	2001
Existence of a phonon bottleneck for excitons in quantum dots R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg Physical review b 64 (24), 241305, 2001	213	2001
Interrelation of structural and electronic properties in quantum dots using an eight-band model M Winkelnkemper, A Schliwa, D Bimberg Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006	202	2006
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ... Solid State Communications 96 (12), 943-949, 1995	199	1995
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ... Applied physics letters 72 (8), 942-944, 1998	197	1998
Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ... physica status solidi (b) 234 (3), R7-R9, 2002	196	2002

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