Articoli con mandati relativi all'accesso pubblico - Jacob H. LeachUlteriori informazioni
Non disponibili pubblicamente: 6
Incorporation of Mg in free-standing HVPE GaN substrates
ME Zvanut, J Dashdorj, JA Freitas, ER Glaser, WR Willoughby, JH Leach, ...
Journal of Electronic Materials 45, 2692-2696, 2016
Mandati: US National Science Foundation
Structural Characterization of the Nanocolumnar Microstructure of InAlN
W Kong, WY Jiao, JC Li, K Collar, JH Leach, J Fournelle, TH Kim, ...
Journal of Electronic Materials 45, 654-660, 2016
Mandati: US National Science Foundation
Characterization of the Thermal Boundary Resistance of a Ga2O3/4H-SiC Composite Wafer
Y Song, B Chatterjee, C McGray, S Zhukovsky, JH Leach, T Hess, ...
2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2020
Mandati: US Department of Defense
Temperature and Stress Metrology of Ultra-Wide Bandgap β-Ga2O3 Thin Films
B Chatterjee, JH Leach, S Dhar, S Choi
2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2018
Mandati: US Department of Defense
Recent developments in GaN-based optical rapid switching semiconductor devices
SK Mazumder, J Leach, K Udwary, K Technologies, X Wang
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
Mandati: National Natural Science Foundation of China
Incorporation of Mg into thick free-standing HVPE GaN
ME Zvanut, J Dashdorj, JA Freitas, ER Glaser, JH Leach, K Udwary
MRS Advances 1, 169-174, 2016
Mandati: US National Science Foundation
Disponibili pubblicamente: 28
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Mandati: US National Science Foundation, US Department of Energy, US Department of …
Thermal conductivity of GaN, , and SiC from 150 K to 850 K
Q Zheng, C Li, A Rai, JH Leach, DA Broido, DG Cahill
Physical Review Materials 3 (1), 014601, 2019
Mandati: US Department of Energy, US Department of Defense
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy
IEEE Electron Device Letters 42 (8), 1140-1143, 2021
Mandati: US National Science Foundation, US Department of Defense
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
JH Leach, K Udwary, J Rumsey, G Dodson, H Splawn, KR Evans
APL Materials 7 (2), 2019
Mandati: US Department of Defense
Evaluation of the concentration of point defects in GaN
MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ...
Scientific Reports 7 (1), 9297, 2017
Mandati: US National Science Foundation
Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics
Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ...
ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021
Mandati: US National Science Foundation, US Department of Defense
On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: application to Fe-doped GaN
DC Look, JH Leach
Journal of Vacuum Science & Technology B 34 (4), 2016
Mandati: US National Science Foundation
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures–theory and experiment
PP Paskov, M Slomski, JH Leach, JF Muth, T Paskova
AIP advances 7 (9), 2017
Mandati: US National Science Foundation
Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors
B Chatterjee, Y Song, JS Lundh, Y Zhang, Z Xia, Z Islam, J Leach, ...
Applied Physics Letters 117 (15), 2020
Mandati: US National Science Foundation, US Department of Defense
Photoexcited carrier trapping and recombination at Fe centers in GaN
TK Uždavinys, S Marcinkevičius, JH Leach, KR Evans, DC Look
Journal of Applied Physics 119 (21), 2016
Mandati: Swedish Research Council
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
N Killat, M Montes Bajo, T Paskova, KR Evans, J Leach, X Li, Ü Özgür, ...
Applied Physics Letters 103 (19), 2013
Mandati: UK Engineering and Physical Sciences Research Council
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
Y Song, A Bhattacharyya, A Karim, D Shoemaker, HL Huang, S Roy, ...
ACS Applied Materials & Interfaces 15 (5), 7137-7147, 2023
Mandati: US National Science Foundation, US Department of Defense
Growth of AlGaAs, AlInP, and AlGaInP by hydride vapor phase epitaxy
KL Schulte, W Metaferia, J Simon, D Guiling, K Udwary, G Dodson, ...
ACS Applied Energy Materials 2 (12), 8405-8410, 2019
Mandati: US Department of Energy
Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping
M Slomski, PP Paskov, JH Leach, JF Muth, T Paskova
physica status solidi (b) 254 (8), 1600713, 2017
Mandati: US National Science Foundation
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