Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
1343 2018 Universal phonon mean free path spectra in crystalline semiconductors at high temperature JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen
Scientific reports 3 (1), 2963, 2013
188 2013 High electron mobility in nearly lattice-matched AlInN∕ AlN∕ GaN heterostructure field effect transistors J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç
Applied Physics Letters 91 (13), 2007
162 2007 Thermal conductivity of GaN, Q Zheng, C Li, A Rai, JH Leach, DA Broido, DG Cahill
Physical Review Materials 3 (1), 014601, 2019
156 2019 High-k Oxide Field-Plated Vertical (001) β-Ga2 O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2 S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy
IEEE Electron Device Letters 42 (8), 1140-1143, 2021
141 2021 Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films JH Leach, K Udwary, J Rumsey, G Dodson, H Splawn, KR Evans
APL Materials 7 (2), 2019
121 2019 The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ...
New Journal of Physics 11 (6), 063031, 2009
89 2009 Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET Q Fan, JH Leach, H Morkoc
Proceedings of the IEEE 98 (7), 1140-1150, 2010
84 2010 Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
IEEE Electron device letters 33 (3), 366-368, 2012
79 2012 Evaluation of the concentration of point defects in GaN MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ...
Scientific Reports 7 (1), 9297, 2017
69 2017 Ga2 O3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ...
ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021
65 2021 On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: application to Fe-doped GaN DC Look, JH Leach
Journal of Vacuum Science & Technology B 34 (4), 2016
62 2016 Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers J Xie, JH Leach, X Ni, M Wu, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 91 (26), 2007
59 2007 Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels A Matulionis, J Liberis, E Šermukšnis, J Xie, JH Leach, M Wu, H Morkoç
Semiconductor science and technology 23 (7), 075048, 2008
57 2008 Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 95 (22), 2009
56 2009 Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures–theory and experiment PP Paskov, M Slomski, JH Leach, JF Muth, T Paskova
AIP advances 7 (9), 2017
53 2017 Status of reliability of GaN-based heterojunction field effect transistors JH Leach, H Morkoc
Proceedings of the IEEE 98 (7), 1127-1139, 2010
53 2010 The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers Z Su, JP Freedman, JH Leach, EA Preble, RF Davis, JA Malen
Journal of Applied Physics 113 (21), 2013
51 2013 Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields L Ardaravičius, M Ramonas, J Liberis, O Kiprijanovič, A Matulionis, J Xie, ...
Journal of Applied Physics 106 (7), 2009
51 2009 High voltage bulk GaN-based photoconductive switches for pulsed power applications JH Leach, R Metzger, EA Preble, KR Evans
Gallium Nitride Materials and Devices VIII 8625, 294-300, 2013
48 2013 