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Ankur Agarwal
Ankur Agarwal
Maharashtra Knowledge Corporation Limited (Business Analyst)
Email verificata su mkcl.org
Titolo
Citata da
Citata da
Anno
Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
S Banna, VN Todorow, KS Collins, A Nguyen, MJ Salinas, Z Chen, ...
US Patent App. 12/821,636, 2011
5352011
Fast atomic layer etch process using an electron beam
A Agarwal, S Rauf, K Ramaswamy
US Patent 9,362,131, 2016
2902016
Plasma atomic layer etching using conventional plasma equipment
A Agarwal, MJ Kushner
Journal of Vacuum Science & Technology A 27 (1), 37-50, 2009
2152009
Pulsed high-density plasmas for advanced dry etching processes
S Banna, A Agarwal, G Cunge, M Darnon, E Pargon, O Joubert
Journal of Vacuum Science & Technology A 30 (4), 2012
2132012
Pulsed plasma high aspect ratio dielectric process
A Agarwal, KS Collins, S Rauf, K Ramaswamy, TB Lill
US Patent 8,382,999, 2013
1602013
Synchronized radio frequency pulsing for plasma etching
B Liao, K Kawasaki, Y Pattar, SF Shoji, DD Nguyen, K Ramaswamy, ...
US Patent 8,962,488, 2015
1502015
Effect of cell size and shape on single-cell electroporation
A Agarwal, I Zudans, EA Weber, J Olofsson, O Orwar, SG Weber
Analytical chemistry 79 (10), 3589-3596, 2007
1202007
Inductively coupled pulsed plasmas in the presence of synchronous pulsed substrate bias for robust, reliable, and fine conductor etching
S Banna, A Agarwal, K Tokashiki, H Cho, S Rauf, V Todorow, ...
IEEE Transactions on Plasma Science 37 (9), 1730-1746, 2009
1162009
Synchronized radio frequency pulsing for plasma etching
B Liao, K Kawasaki, Y Pattar, SF Shoji, DD Nguyen, K Ramaswamy, ...
US Patent 8,404,598, 2013
1102013
Apparatus for radial delivery of gas to a chamber and methods of use thereof
JA Lee, MJ Salinas, A Agarwal, ER Gold, JP Cruse, A Pal, A Nguyen
US Patent 8,562,742, 2013
992013
QDB: a new database of plasma chemistries and reactions
J Tennyson, S Rahimi, C Hill, L Tse, A Vibhakar, D Akello-Egwel, ...
Plasma Sources Science and Technology 26 (5), 055014, 2017
702017
Effect of simultaneous source and bias pulsing in inductively coupled plasma etching
A Agarwal, PJ Stout, S Banna, S Rauf, K Tokashiki, JY Lee, K Collins
Journal of Applied Physics 106 (10), 2009
692009
Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity
A Agarwal, MJ Kushner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23 (5 …, 2005
652005
Efficient AI system design with cross-layer approximate computing
S Venkataramani, X Sun, N Wang, CY Chen, J Choi, M Kang, A Agarwal, ...
Proceedings of the IEEE 108 (12), 2232-2250, 2020
562020
Seasoning of plasma etching reactors: Ion energy distributions to walls and real-time and run-to-run control strategies
A Agarwal, MJ Kushner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 26 (3 …, 2008
562008
Synchronous pulse plasma operation upon source and bias radio frequencys for inductively coupled plasma for highly reliable gate etching technology
K Tokashiki, H Cho, S Banna, JY Lee, K Shin, V Todorow, WS Kim, ...
Japanese journal of applied physics 48 (8S1), 08HD01, 2009
432009
Numerical calculations of single-cell electroporation with an electrolyte-filled capillary
I Zudans, A Agarwal, O Orwar, SG Weber
Biophysical journal 92 (10), 3696-3705, 2007
432007
Gas heating mechanisms in capacitively coupled plasmas
A Agarwal, S Rauf, K Collins
Plasma Sources Science and Technology 21 (5), 055012, 2012
412012
Etching with atomic precision by using low electron temperature plasma
L Dorf, JC Wang, S Rauf, GA Monroy, Y Zhang, A Agarwal, J Kenney, ...
Journal of Physics D: Applied Physics 50 (27), 274003, 2017
382017
Extraction of negative ions from pulsed electronegative capacitively coupled plasmas
A Agarwal, S Rauf, K Collins
Journal of Applied Physics 112 (3), 2012
382012
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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