Articoli con mandati relativi all'accesso pubblico - Francesco IannuzzoUlteriori informazioni
Non disponibili pubblicamente: 13
Elimination of bus voltage impact on temperature sensitive electrical parameter during turn-on transition for junction temperature estimation of high-power IGBT modules
H Luo, F Iannuzzo, F Blaabjerg, X Wang, W Li, X He
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 5892-5898, 2017
Mandati: National Natural Science Foundation of China
Single-event effects in power MOSFETs during heavy ion irradiations performed after gamma-ray degradation
G Busatto, V De Luca, F Iannuzzo, A Sanseverino, F Velardi
IEEE Transactions on Nuclear Science 60 (5), 3793-3801, 2013
Mandati: Governo Italiano
Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design
H Luo, W Li, X He, F Iannuzzo, F Blaabjerg
Microelectronics Reliability 76, 123-130, 2017
Mandati: National Natural Science Foundation of China
Low inductive characterization of fast-switching SiC MOSFETs and active gate driver units
DA Philipps, P Xue, TN Ubostad, F Iannuzzo, D Peftitsis
IEEE Transactions on Industry Applications 59 (5), 6384-6398, 2023
Mandati: Research Council of Norway
Prediction of the electrochemical migration induced failure on power PCBs under humidity condition—A case study
P Xue, AS Bahman, F Iannuzzo, HC Gudla, AR Lakkaraju, R Ambat
Microelectronics Reliability 139, 114796, 2022
Mandati: Innovation Fund Denmark
Short-Circuit Capability Optimization of Press-Pack IGBT by Improving Active Edge Heat Dissipation
Y Yu, H Li, R Yao, F Iannuzzo, Z Zhu, X Chen
IEEE Transactions on Power Electronics 38 (5), 6143-6156, 2023
Mandati: National Natural Science Foundation of China
Analytical modeling and sensitivity analysis on plasma extraction transit time (PETT) oscillations in high-voltage NPT pin diode
A Zhu, S Ye, J Kang, Z Xin, H Luo, F Iannuzzo, W Li, X He
IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (2 …, 2022
Mandati: National Natural Science Foundation of China
Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs
Y Zhang, Y Zhang, VH Wong, S Kalker, A Caruso, L Ruppert, F Iannuzzo, ...
IEEE Transactions on Power Electronics, 2024
Mandati: Danish Council for Independent Research
Investigation on the short-circuit withstand capability of press-pack IGBT modules with optimized package structures
R Liu, H Li, R Yao, W Lai, Z Duan, F Iannuzzo
2023 24th International Vacuum Electronics Conference (IVEC), 1-6, 2023
Mandati: National Natural Science Foundation of China
Lifetime prediction for press pack IGBT device by considering fretting wear failure
R Yao, Z Duan, H Li, F Iannuzzo, W Lai, X Chen
Microelectronics Reliability 145, 114984, 2023
Mandati: National Natural Science Foundation of China
A Busbar Integrated SiC-Based Converter with Embedded Heat-Pipes
Y Chang, AS Bahman, H Luo, W Li, X He, F Iannuzzo, F Blaabjerg
2019 10th International Conference on Power Electronics and ECCE Asia (ICPE …, 2019
Mandati: National Natural Science Foundation of China
Optimization of a Bidirectional Boost Converter for Nanogrid Applications
RAL Mdanat, S Saeed, R Georgious, J Garcia, F Iannuzzo
2023 IEEE Industry Applications Society Annual Meeting (IAS), 1-8, 2023
Mandati: European Commission, Government of Spain
Thermal Mapping of Power Modules Using Optical Fibers during AC Power Cycling Tests
K Zhang, F Iannuzzo
2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2630-2633, 2023
Mandati: Danish Council for Independent Research
Disponibili pubblicamente: 48
Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy
L Ceccarelli, RM Kotecha, AS Bahman, F Iannuzzo, HA Mantooth
IEEE Transactions on Power Electronics 34 (10), 9698-9708, 2019
Mandati: US National Science Foundation, US Department of Energy, Innovation Fund Denmark
Design of low-inductance switching power cell for GaN HEMT based inverter
E Gurpinar, F Iannuzzo, Y Yang, A Castellazzi, F Blaabjerg
IEEE Transactions on Industry Applications 54 (2), 1592-1601, 2017
Mandati: US Department of Energy
Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules
H Luo, W Li, F Iannuzzo, X He, F Blaabjerg
IEEE Transactions on Industrial Electronics 65 (6), 4724-4738, 2017
Mandati: National Natural Science Foundation of China
Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches
K Hu, Z Liu, Y Yang, F Iannuzzo, F Blaabjerg
IEEE Access 8, 89988-90022, 2020
Mandati: National Natural Science Foundation of China
Investigation and classification of short-circuit failure modes based on three-dimensional safe operating area for high-power IGBT modules
Y Chen, W Li, F Iannuzzo, H Luo, X He, F Blaabjerg
IEEE Transactions on Power Electronics 33 (2), 1075-1086, 2017
Mandati: National Natural Science Foundation of China
Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum During Turn-off for High Power Trench Gate …
Y Chen, H Luo, W Li, X He, F Iannuzzo, F Blaabjerg
IEEE Transactions on Power Electronics 32 (8), 6394-6404, 2016
Mandati: National Natural Science Foundation of China
Study of current density influence on bond wire degradation rate in SiC MOSFET modules
H Luo, F Iannuzzo, N Baker, F Blaabjerg, W Li, X He
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
Mandati: National Natural Science Foundation of China
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