| Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers B So, J Kim, T Kwak, T Kim, J Lee, U Choi, O Nam RSC advances 8 (62), 35528-35533, 2018 | 40 | 2018 |
| Efficiency improvement of deep‐ultraviolet light emitting diodes with gradient electron blocking layers B So, J Kim, E Shin, T Kwak, T Kim, O Nam physica status solidi (a) 215 (10), 1700677, 2018 | 35 | 2018 |
| Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition T Kwak, J Lee, B So, U Choi, O Nam Journal of Crystal Growth 510, 50-55, 2019 | 28 | 2019 |
| Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate T Kwak, J Lee, U Choi, B So, G Yoo, S Kim, O Nam Diamond and Related Materials 114, 108335, 2021 | 21 | 2021 |
| High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate U Choi, T Kwak, S Han, SW Kim, O Nam Diamond and Related Materials 121, 108782, 2022 | 16 | 2022 |
| The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor U Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam physica status solidi (a) 217 (7), 1900694, 2020 | 15 | 2020 |
| Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate K Ko, K Lee, B So, C Heo, K Lee, T Kwak, SW Han, HY Cha, O Nam Japanese Journal of Applied Physics 56 (1), 015502, 2016 | 13 | 2016 |
| Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures U Choi, H Shin, T Kwak, SW Kim, O Nam Diamond and Related Materials 121, 108770, 2022 | 10 | 2022 |
| Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate T Kwak, S Han, U Choi, SW Kim, O Nam Diamond and Related Materials, 109750, 2023 | 8 | 2023 |
| Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire U Choi, HS Kim, K Lee, D Jung, T Kwak, T Jang, Y Nam, B So, MJ Kang, ... physica status solidi (a) 217 (7), 1900695, 2020 | 7 | 2020 |
| Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity J Lee, H Jang, T Kwak, U Choi, B So, O Nam Solid-State Electronics 165, 107751, 2020 | 7 | 2020 |
| Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer B So, C Cheon, J Lee, J Lee, T Kwak, U Choi, JD Song, J Chang, O Nam Thin Solid Films 708, 138103, 2020 | 5 | 2020 |
| Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT U Choi, K Lee, T Kwak, D Jung, T Jang, Y Nam, B So, HS Kim, HY Cha, ... Japanese Journal of Applied Physics 58 (12), 121003, 2019 | 5 | 2019 |
| Electrical characteristics of metal–insulator diamond semiconductor Schottky barrier diode grown on heteroepitaxial diamond substrate S Han, T Kwak, U Choi, H Kang, G Yoo, S Kim, O Nam physica status solidi (a) 220 (6), 2200680, 2023 | 4 | 2023 |
| Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition T Kwak, J Lee, G Yoo, H Shin, U Choi, B So, S Kim, O Nam physica status solidi (a) 217 (12), 1900973, 2020 | 4 | 2020 |
| Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method J Lee, H Jang, T Kwak, U Choi, B So, O Nam physica status solidi (a) 217 (7), 1900722, 2020 | 3 | 2020 |
| Overgrowth of single crystal diamond using defect-selective etching and epitaxy technique in chemical vapor deposition J Lee, T Kwak, G Yoo, S Kim, O Nam Journal of Nanoscience and Nanotechnology 21 (8), 4412-4417, 2021 | 2 | 2021 |
| Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition U Choi, K Lee, J Han, T Jang, Y Nam, B So, T Kwak, O Nam Thin Solid Films 675, 148-152, 2019 | 2 | 2019 |
| Effects of NH3 pre-treatment time on nitrogen-polar GaN grown on carbon-face 4H-SiC using high-temperature metal-organic chemical vapor deposition M Kim, U Choi, K Lee, D Jung, T Kwak, B So, KR Ku, O Nam Journal of Ceramic Processing Research 21 (5), 579-585, 2020 | | 2020 |
