Articoli con mandati relativi all'accesso pubblico - Kirstin AlberiUlteriori informazioni
Non disponibili pubblicamente: 5
Mysterious absence of pair luminescence in gallium phosphide bismide
TM Christian, DA Beaton, K Alberi, B Fluegel, A Mascarenhas
Applied Physics Express 8 (6), 061202, 2015
Mandati: US Department of Energy
Room-temperature spin injection across a chiral perovskite/III–V interface
MP Hautzinger, X Pan, SC Hayden, JY Ye, Q Jiang, MJ Wilson, AJ Phillips, ...
Nature, 1-6, 2024
Mandati: Agence Nationale de la Recherche
Demonstration of GaInP2/Si Voltage Matched Tandem Solar Cells
DC Bobela, KJ Schmieder, MP Lumb, JE Moore, RJ Walters, EA Armour, ...
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2506-2510, 2017
Mandati: US Department of Energy
Electronic structure and lattice site location of Mn in III-Mn-V ferromagnetic semiconductors
K Alberi, KM Yu, W Walukiewicz
Handbook of Spintronic Semiconductors, 123-155, 2019
Mandati: US Department of Energy
Magnetic field-induced direct–indirect crossover in AlxGa1− xAs
K Alberi, AV Mialitsin, B Fluegel, SA Crooker, JL Reno, A Mascarenhas
Applied Physics Express 7 (11), 111201, 2014
Mandati: US Department of Energy
Disponibili pubblicamente: 39
The 2019 materials by design roadmap
K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ...
Journal of Physics D: Applied Physics 52 (1), 013001, 2018
Mandati: US National Science Foundation, US Department of Energy, US Department of …
Suppression of compensating native defect formation during semiconductor processing via excess carriers
K Alberi, MA Scarpulla
Scientific reports 6 (1), 27954, 2016
Mandati: US Department of Energy
Low-cost CdTe/silicon tandem solar cells
AC Tamboli, DC Bobela, A Kanevce, T Remo, K Alberi, M Woodhouse
IEEE Journal of Photovoltaics 7 (6), 1767-1772, 2017
Mandati: US Department of Energy
Insight into the epitaxial growth of high optical quality GaAs1–xBix
DA Beaton, A Mascarenhas, K Alberi
Journal of Applied Physics 118 (23), 2015
Mandati: US Department of Energy
Defects in epilayers via molecular beam epitaxy and strategies for reducing them
AD Rice, K Park, ET Hughes, K Mukherjee, K Alberi
Physical Review Materials 3 (12), 121201, 2019
Mandati: US Department of Energy
Epitaxial Dirac semimetal vertical heterostructures for advanced device architectures
AD Rice, CH Lee, B Fluegel, AG Norman, JN Nelson, CS Jiang, M Steger, ...
Advanced Functional Materials 32 (21), 2111470, 2022
Mandati: US Department of Energy
Spectrally resolved localized states in GaAs1− xBix
TM Christian, K Alberi, DA Beaton, B Fluegel, A Mascarenhas
Japanese Journal of Applied Physics 56 (3), 035801, 2017
Mandati: US Department of Energy
Direct observation of the resonant state in
K Alberi, DA Beaton, A Mascarenhas
Physical Review B 92 (24), 241201, 2015
Mandati: US Department of Energy
Simulated potential for enhanced performance of mechanically stacked hybrid III–V/Si tandem photovoltaic modules using DC–DC converters
S MacAlpine, DC Bobela, S Kurtz, MP Lumb, KJ Schmieder, JE Moore, ...
Journal of Photonics for Energy 7 (4), 042501-042501, 2017
Mandati: US Department of Energy
Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer
C Zhang, K Alberi, C Honsberg, K Park
Applied Surface Science 549, 149245, 2021
Mandati: US National Science Foundation, US Department of Energy
A roadmap for tandem photovoltaics
K Alberi, JJ Berry, JJ Cordell, DJ Friedman, JF Geisz, AR Kirmani, ...
Joule, 2024
Mandati: Swiss National Science Foundation, European Commission
Bismuth-induced raman modes in GaP1− xBix
TM Christian, B Fluegel, DA Beaton, K Alberi, A Mascarenhas
Japanese Journal of Applied Physics 55 (10), 108002, 2016
Mandati: US Department of Energy
Ultra-low threshold polariton condensation
M Steger, B Fluegel, K Alberi, DW Snoke, LN Pfeiffer, K West, ...
Optics Letters 42 (6), 1165-1168, 2017
Mandati: US National Science Foundation, US Department of Energy, US Department of …
Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors
K Alberi, MA Scarpulla
Journal of Applied Physics 123 (18), 2018
Mandati: US Department of Energy
Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications
K Park, D Beaton, KX Steirer, K Alberi
Applied Surface Science 405, 247-254, 2017
Mandati: US Department of Energy
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