Symmetry-dependent field-free switching of perpendicular magnetization L Liu, C Zhou, X Shu, C Li, T Zhao, W Lin, J Deng, Q Xie, S Chen, J Zhou, ...
Nature Nanotechnology 16 (3), 277-282, 2021
235 2021 Current-induced magnetization switching in all-oxide heterostructures L Liu#, Q Qin#, W Lin#, C Li, Q Xie, S He, X Shu, C Zhou, Z Lim, J Yu, ...
Nature Nanotechnology, 1-6, 2019
187 2019 Emergence of Topological Hall Effect in a SrRuO3 Single Layer Q Qin#, L Liu#, W Lin#, X Shu, Q Xie, Z Lim, C Li, S He, GM Chow, J Chen
Advanced Materials 31 (8), 1807008, 2019
159 2019 Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation HY Peng, YF Li, WN Lin, YZ Wang, XY Gao, T Wu
Scientific reports 2, 442, 2012
144 2012 Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect R Guo, L You, W Lin, A Abdelsamie, X Shu, G Zhou, S Chen, L Liu, X Yan, ...
Nature communications 11 (1), 2571, 2020
138 2020 Nonvolatile Resistive Switching in S Wu, X Luo, S Turner, H Peng, W Lin, J Ding, A David, B Wang, ...
Physical Review X 3 (4), 041027, 2013
130 2013 Ferroic tunnel junctions and their application in neuromorphic networks R Guo#, W Lin#, X Yan#, T Venkatesan, J Chen
Applied Physics Reviews 7 (1), 011304, 2020
124 2020 Control of synaptic plasticity learning of ferroelectric tunnel memristor by nanoscale interface engineering R Guo, Y Zhou, L Wu, Z Wang, Z Lim, X Yan, W Lin, H Wang, HY Yoong, ...
ACS applied materials & interfaces 10 (15), 12862-12869, 2018
121 2018 Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit H Wang, ZR Liu, HY Yoong, TR Paudel, JX Xiao, R Guo, WN Lin, P Yang, ...
Nature communications 9 (1), 3319, 2018
108 2018 Electrical switching of perpendicular magnetization in a single ferromagnetic layer L Liu, J Yu, R González-Hernández, C Li, J Deng, W Lin, C Zhou, T Zhou, ...
Physical Review B 101 (22), 220402, 2020
107 2020 Multi‐nonvolatile state resistive switching arising from ferroelectricity and oxygen vacancy migration W Lü, C Li, L Zheng, J Xiao, W Lin, Q Li, XR Wang, Z Huang, S Zeng, ...
Advanced Materials 29 (24), 1606165, 2017
104 2017 Electrostatic Modulation of LaAlO3 /SrTiO3 Interface Transport in an Electric Double‐Layer Transistor WN Lin, JF Ding, SX Wu, YF Li, J Lourembam, S Shannigrahi, SJ Wang, ...
Advanced Materials Interfaces 1 (1), 1300001, 2014
96 2014 Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ...
Science advances 5 (5), eaau6696, 2019
86 2019 Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3 d electrons W Lin, L Li, F Doğan, C Li, H Rotella, X Yu, B Zhang, Y Li, WS Lew, ...
Nature communications 10 (1), 3052, 2019
79 2019 Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer Q Xie#, W Lin#, B Yang#, X Shu, S Chen, L Liu, X Yu, MBH Breese, ...
Advanced Materials 31 (21), 1900776, 2019
79 2019 Current-induced self-switching of perpendicular magnetization in CoPt single layer L Liu, C Zhou, T Zhao, B Yao, J Zhou, X Shu, S Chen, S Shi, S Xi, D Lan, ...
Nature Communications 13 (1), 3539, 2022
67 2022 Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide Y Li, R Deng, W Lin, Y Tian, H Peng, J Yi, B Yao, T Wu
Physical Review B—Condensed Matter and Materials Physics 87 (15), 155151, 2013
62 2013 Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing J Zhou, T Zhao, X Shu, L Liu, W Lin, S Chen, S Shi, X Yan, X Liu, J Chen
Advanced Materials 33 (36), 2103672, 2021
60 2021 Photoinduced modulation and relaxation characteristics in LaAlO3 /SrTiO3 heterointerface KX Jin, W Lin, BC Luo, T Wu
Scientific reports 5, 8778, 2015
59 2015 Anomalous exchange bias at collinear/noncollinear spin interface YF Tian, JF Ding, WN Lin, ZH Chen, A David, M He, WJ Hu, L Chen, T Wu
Scientific reports 3, 1094, 2013
58 2013 
Jingsheng ChenProfessor, Department of Materials Science and Engineering, National University of SingaporeEmail verificata su nus.edu.sg