Articoli con mandati relativi all'accesso pubblico - Michael SchröterUlteriori informazioni
Non disponibili pubblicamente: 74
SiGe HBT technology: Future trends and TCAD-based roadmap
M Schröter, T Rosenbaum, P Chevalier, B Heinemann, SP Voinigescu, ...
Proceedings of the IEEE 105 (6), 1068-1086, 2016
Mandati: German Research Foundation
Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications
P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ...
Proceedings of the IEEE 105 (6), 1035-1050, 2017
Mandati: German Research Foundation
Toward linearity in Schottky barrier CNTFETs
S Mothes, M Claus, M Schröter
IEEE Transactions on Nanotechnology 14 (2), 372-378, 2015
Mandati: German Research Foundation
High-performance reconfigurable Si nanowire field-effect transistor based on simplified device design
G Darbandy, M Claus, M Schröter
IEEE Transactions on Nanotechnology 15 (2), 289-294, 2016
Mandati: German Research Foundation
A semiphysical large-signal compact carbon nanotube FET model for analog RF applications
M Schröter, M Haferlach, A Pacheco-Sanchez, S Mothes, P Sakalas, ...
IEEE Transactions on Electron Devices 62 (1), 52-60, 2014
Mandati: German Research Foundation
Methods for determining the emitter resistance in SiGe HBTs: A review and an evaluation across technology generations
J Krause, M Schröter
IEEE Transactions on Electron Devices 62 (5), 1363-1374, 2015
Mandati: German Research Foundation
An improved transfer current model for RF and mm-wave SiGe (C) heterojunction bipolar transistors
A Pawlak, M Schroter
IEEE Transactions on Electron Devices 61 (8), 2612-2618, 2014
Mandati: German Research Foundation
SiGe HBT modeling for mm-wave circuit design
A Pawlak, S Lehmann, P Sakalas, J Krause, K Aufinger, B Ardouin, ...
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 149-156, 2015
Mandati: German Research Foundation, European Commission
Three-dimensional transport simulations and modeling of densely packed CNTFETs
S Mothes, M Schröter
IEEE transactions on Nanotechnology 17 (6), 1282-1287, 2018
Mandati: German Research Foundation
Experimental and theoretical study of fTfor SiGe HBTs with a scaled vertical doping profile
J Korn, H Rücker, B Heinemann, A Pawlak, G Wedel, M Schröter
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 117-120, 2015
Mandati: German Research Foundation
The rectangular bipolar transistor tetrode structure and its application
M Schroter, S Lehmann
2007 IEEE International Conference on Microelectronic Test Structures, 206-209, 2007
Mandati: German Research Foundation
SiGe heterojunction bipolar transistor technology for sub-mm-wave electronics—State-of-the-art and future prospects
M Schroter, A Pawlak
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2018
Mandati: German Research Foundation
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
S Phillips, E Preisler, J Zheng, S Chaudhry, M Racanelli, M Müller, ...
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021
Mandati: US Department of Defense, German Research Foundation
A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTs
A Pawlak, S Lehmann, M Schroter
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 175-178, 2014
Mandati: German Research Foundation
Impact of incomplete metal coverage on the electrical properties of metal-CNT contacts: A large-scale ab initio study
A Fediai, DA Ryndyk, G Seifert, S Mothes, M Schroter, M Claus, ...
Applied Physics Letters 109 (10), 2016
Mandati: German Research Foundation
A CNTFET amplifier with 5.6 dB gain operating at 460–590 MHz
A Taghavi, C Carta, F Ellinger, M Haferlach, M Claus, M Schroter
2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference …, 2015
Mandati: German Research Foundation
mm-Wave noise modeling in advanced SiGe and InP HBTs
P Sakalas, M Schroter, H Zirath
Journal of Computational Electronics 14, 62-71, 2015
Mandati: German Research Foundation
The HiCuM bipolar transistor model
M Schröter, B Ardouin
Compact Modeling: Principles, Techniques and Applications, 231-267, 2010
Mandati: German Research Foundation
Modeling of the lateral emitter-current crowding effect in SiGe HBTs
S Yadav, A Chakravorty, M Schroter
IEEE Transactions on Electron Devices 63 (11), 4160-4166, 2016
Mandati: Department of Science & Technology, India
A 5.9 mW E-/W-band SiGe-HBT LNA with 48 GHz 3-dB bandwidth and 4.5-dB noise figure
E Vardarli, P Sakalas, M Schröter
IEEE Microwave and Wireless Components Letters 32 (12), 1451-1454, 2022
Mandati: German Research Foundation
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