Articoli con mandati relativi all'accesso pubblico - Wei CaoUlteriori informazioni
Non disponibili pubblicamente: 4
Effect of band-tails on the subthreshold performance of 2D tunnel-FETs
H Zhang, W Cao, J Kang, K Banerjee
2016 IEEE International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2016
Mandati: US National Science Foundation
Monolithic-3D integration with 2D materials: Toward ultimate vertically-scaled 3D-ICs
J Jiang, K Parto, W Cao, K Banerjee
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018
Mandati: US Department of Defense
Interfacial thermal conductivity of 2D layered materials: An atomistic approach
K Parto, A Pal, X Xie, W Cao, K Banerjee
2018 IEEE International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2018
Mandati: US Department of Defense
Computational study of gate-induced drain leakage in 2D-semiconductor field-effect transistors
J Kang, W Cao, A Pal, S Pandey, S Kramer, R Hill, G Sandhu, K Banerjee
2017 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2017
Mandati: US Department of Defense
Disponibili pubblicamente: 18
A subthermionic tunnel field-effect transistor with an atomically thin channel
D Sarkar, X Xie, W Liu, W Cao, J Kang, Y Gong, S Kraemer, PM Ajayan, ...
Nature 526 (7571), 91-95, 2015
Mandati: US National Institutes of Health
Is negative capacitance FET a steep-slope logic switch?
W Cao, K Banerjee
Nature communications 11 (1), 196, 2020
Mandati: US Department of Defense
Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects
J Jiang, J Kang, W Cao, X Xie, H Zhang, JH Chu, W Liu, K Banerjee
Nano letters 17 (3), 1482-1488, 2017
Mandati: US Department of Defense
The future transistors
W Cao, H Bu, M Vinet, M Cao, S Takagi, S Hwang, T Ghani, K Banerjee
Nature 620 (7974), 501-515, 2023
Mandati: US National Science Foundation, US Department of Defense, Japan Science and …
Ultimate monolithic-3D integration with 2D materials: rationale, prospects, and challenges
J Jiang, K Parto, W Cao, K Banerjee
IEEE Journal of the Electron Devices Society 7, 878-887, 2019
Mandati: US Department of Defense
2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges
W Cao, J Jiang, X Xie, A Pal, JH Chu, J Kang, K Banerje
IEEE Transactions on Electron Devices 65 (10), 4109 - 4121, 2018
Mandati: US National Science Foundation, US Department of Energy, US Department of …
One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across Mo S 2/Metal …
K Parto, A Pal, T Chavan, K Agashiwala, CH Yeh, W Cao, K Banerjee
Physical Review Applied 15 (6), 064068, 2021
Mandati: US National Science Foundation, US Department of Defense
0.5 T0. 5R—An ultracompact RRAM cell uniquely enabled by van der Waals heterostructures
D Zhang, CH Yeh, W Cao, K Banerjee
IEEE Transactions on Electron Devices 68 (4), 2033-2040, 2021
Mandati: US Department of Defense
Designing artificial 2D crystals with site and size controlled quantum dots
X Xie, J Kang, W Cao, JH Chu, Y Gong, PM Ajayan, K Banerjee
Scientific reports 7 (1), 9965, 2017
Mandati: US National Science Foundation, US Department of Defense
Area-selective-CVD technology enabled top-gated and scalable 2D-heterojunction transistors with dynamically tunable Schottky barrier
CH Yeh, W Cao, A Pal, K Parto, K Banerjee
2019 IEEE International Electron Devices Meeting (IEDM), 23.4. 1-23.4. 4, 2019
Mandati: US Department of Defense
Two-dimensional materials enabled next-generation low-energy compute and connectivity
A Pal, K Agashiwala, J Jiang, D Zhang, T Chavan, A Kumar, CH Yeh, ...
MRS Bulletin 46 (12), 1211-1228, 2021
Mandati: US National Science Foundation, US Department of Defense
A mode-balanced reconfigurable logic gate built in a van der Waals strata
W Cao, JH Chu, K Parto, K Banerjee
npj 2D Materials and Applications 5 (1), 20, 2021
Mandati: US Department of Defense, Fundação para a Ciência e a Tecnologia, Portugal
Impact of transport anisotropy on the performance of van der Waals materials-based electron devices
W Cao, M Huang, CH Yeh, K Parto, K Banerjee
IEEE Transactions on Electron Devices 67 (3), 1310-1316, 2020
Mandati: US Department of Defense
0.5 T0. 5R-introducing an ultra-compact memory cell enabled by shared graphene edge-contact and h-BN insulator
CH Yeh, D Zhang, W Cao, K Banerjee
2020 IEEE International Electron Devices Meeting (IEDM), 12.3. 1-12.3. 4, 2020
Mandati: US Department of Defense
A compact current–voltage model for 2-D-semiconductor-based lateral homo-/hetero-junction tunnel-FETs
A Pal, W Cao, K Banerjee
IEEE Transactions on Electron Devices 67 (10), 4473-4481, 2020
Mandati: US Department of Defense
Prospects of ultra-thin nanowire gated 2D-FETs for next-generation CMOS technology
W Cao, W Liu, K Banerjee
2016 IEEE International Electron Devices Meeting (IEDM), 14.7. 1-14.7. 4, 2016
Mandati: US National Science Foundation
Le informazioni sulla pubblicazione e sul finanziamento vengono stabilite automaticamente da un software