| High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra Applied Physics Letters 93 (14), 2008 | 537 | 2008 |
| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 499 | 2013 |
| Method for improved growth of semipolar (Al, In, Ga, B) N JF Kaeding, DS Lee, M Iza, TJ Baker, H Sato, BA Haskell, JS Speck, ... US Patent 7,691,658, 2010 | 318 | 2010 |
| High internal and external quantum efficiency InGaN/GaN solar cells E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ... Applied Physics Letters 98 (2), 2011 | 270 | 2011 |
| Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ... Applied physics letters 93 (10), 2008 | 247 | 2008 |
| Measurement of electron overflow in 450 nm InGaN light-emitting diode structures KJ Vampola, M Iza, S Keller, SP DenBaars, S Nakamura Applied Physics Letters 94 (6), 2009 | 243 | 2009 |
| Method for deposition of magnesium doped (Al, In, Ga, B) N layers M Iza, H Sato, SP DenBaars, S Nakamura US Patent 7,709,284, 2010 | 155 | 2010 |
| High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ... Applied Physics Letters 98 (20), 2011 | 154 | 2011 |
| High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates A Tyagi, H Zhong, NN Fellows, M Iza, JS Speck, SP DenBaars, ... Japanese Journal of Applied Physics 46 (2L), L129, 2007 | 125 | 2007 |
| High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals E Matioli, E Rangel, M Iza, B Fleury, N Pfaff, J Speck, E Hu, C Weisbuch Applied physics letters 96 (3), 2010 | 124 | 2010 |
| Method for conductivity control of (Al, In, Ga, B) N JF Kaeding, H Sato, M Iza, H Asamizu, H Zhong, SP DenBaars, ... US Patent 8,193,079, 2012 | 104 | 2012 |
| High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates NG Young, RM Farrell, YL Hu, Y Terao, M Iza, S Keller, SP DenBaars, ... Applied Physics Letters 103 (17), 2013 | 95 | 2013 |
| Effect of doping and polarization on carrier collection in InGaN quantum well solar cells CJ Neufeld, SC Cruz, RM Farrell, M Iza, JR Lang, S Keller, S Nakamura, ... Applied Physics Letters 98 (24), 2011 | 93 | 2011 |
| AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates BK SaifAddin, AS Almogbel, CJ Zollner, F Wu, B Bonef, M Iza, ... ACS Photonics 7 (3), 554-561, 2020 | 90 | 2020 |
| High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration NG Young, EE Perl, RM Farrell, M Iza, S Keller, JE Bowers, S Nakamura, ... Applied Physics Letters 104 (16), 2014 | 87 | 2014 |
| Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells YL Hu, RM Farrell, CJ Neufeld, M Iza, SC Cruz, N Pfaff, D Simeonov, ... Applied Physics Letters 100 (16), 2012 | 66 | 2012 |
| Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm P Li, H Li, H Zhang, C Lynsky, M Iza, JS Speck, S Nakamura, ... Applied Physics Letters 119 (8), 2021 | 61 | 2021 |
| Light-polarization characteristics of electroluminescence from InGaN∕ GaN light-emitting diodes prepared on (112¯ 2)-plane GaN H Masui, TJ Baker, M Iza, H Zhong, S Nakamura, SP DenBaars Journal of applied physics 100 (11), 2006 | 61 | 2006 |
| Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact P Li, H Li, H Zhang, Y Yang, MS Wong, C Lynsky, M Iza, MJ Gordon, ... Applied Physics Letters 120 (12), 2022 | 57 | 2022 |
| Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency X Huang, H Fu, H Chen, X Zhang, Z Lu, J Montes, M Iza, SP DenBaars, ... Applied Physics Letters 110 (16), 2017 | 52 | 2017 |