CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes E Talamas Simola, V Kiyek, A Ballabio, V Schlykow, J Frigerio, ...
ACS photonics 8 (7), 2166-2173, 2021
72 2021 Observation of large unidirectional Rashba magnetoresistance in Ge (111) T Guillet, C Zucchetti, Q Barbedienne, A Marty, G Isella, L Cagnon, ...
Physical Review Letters 124 (2), 027201, 2020
70 2020 Spin-Hall voltage over a large length scale in bulk germanium F Bottegoni, C Zucchetti, S Dal Conte, J Frigerio, E Carpene, C Vergnaud, ...
Physical Review Letters 118 (16), 167402, 2017
39 2017 Imaging spin diffusion in germanium at room temperature C Zucchetti, F Bottegoni, C Vergnaud, F Ciccacci, G Isella, L Ghirardini, ...
Physical Review B 96 (1), 014403, 2017
33 2017 Tuning spin-charge interconversion with quantum confinement in ultrathin bismuth films C Zucchetti, MT Dau, F Bottegoni, C Vergnaud, T Guillet, A Marty, ...
Physical Review B 98 (18), 184418, 2018
28 2018 Non-local electrical spin injection and detection in germanium at room temperature F Rortais, C Vergnaud, A Marty, L Vila, JP Attané, J Widiez, C Zucchetti, ...
Applied Physics Letters 111 (18), 2017
26 2017 Spin-to-charge conversion for hot photoexcited electrons in germanium C Zucchetti, F Bottegoni, G Isella, M Finazzi, F Rortais, C Vergnaud, ...
Physical Review B 97 (12), 125203, 2018
24 2018 Large Rashba unidirectional magnetoresistance in the Fe/Ge (111) interface states T Guillet, A Marty, C Vergnaud, M Jamet, C Zucchetti, G Isella, ...
Physical Review B 103 (6), 064411, 2021
21 2021 Optical generation of pure spin currents at the indirect gap of bulk Si F Bottegoni, C Zucchetti, F Ciccacci, M Finazzi, G Isella
Applied Physics Letters 110 (4), 2017
19 2017 Spin-charge interconversion in heterostructures based on group-IV semiconductors F Bottegoni, C Zucchetti, G Isella, M Bollani, M Finazzi, F Ciccacci
La Rivista del Nuovo Cimento 43, 45-96, 2020
18 2020 Doping dependence of the electron spin diffusion length in germanium C Zucchetti, M Bollani, G Isella, M Zani, M Finazzi, F Bottegoni
APL Materials 7 (10), 2019
18 2019 Modeling the photo-induced inverse spin-Hall effect in Pt/semiconductor junctions F Bottegoni, C Zucchetti, G Isella, E Pinotti, M Finazzi, F Ciccacci
Journal of Applied Physics 124 (3), 2018
18 2018 Spin polarized surface resonance bands in single layer Bi on Ge (1 1 1) F Bottegoni, A Calloni, G Bussetti, A Camera, C Zucchetti, M Finazzi, ...
Journal of Physics: Condensed Matter 28 (19), 195001, 2016
17 2016 Tunable second harmonic generation by an all-dielectric diffractive metasurface embedded in liquid crystals D Rocco, A Zilli, A Ferraro, A Borne, V Vinel, G Leo, A Lemaître, ...
New Journal of Physics 24 (4), 045002, 2022
16 2022 Spin orbitronics at a topological insulator-semiconductor interface T Guillet, C Zucchetti, A Marchionni, A Hallal, P Biagioni, C Vergnaud, ...
Physical Review B 101 (18), 184406, 2020
16 2020 Inverse spin-Hall effect in GeSn A Marchionni, C Zucchetti, F Ciccacci, M Finazzi, HS Funk, D Schwarz, ...
Applied Physics Letters 118 (21), 2021
11 2021 Optical orientation and inverse spin Hall effect as effective tools to investigate spin-dependent diffusion M Finazzi, F Bottegoni, C Zucchetti, M Bollani, A Ballabio, J Frigerio, ...
Electronics 5 (4), 80, 2016
11 2016 Graphene/Ge microcrystal photodetectors with enhanced infrared responsivity V Falcone, A Ballabio, A Barzaghi, C Zucchetti, L Anzi, F Bottegoni, ...
APL Photonics 7 (4), 2022
9 2022 Evolution of the structural and electronic properties of thin Bi films on Ge (111) C Zucchetti, F Bottegoni, A Calloni, G Bussetti, L Duo, M Finazzi, ...
Journal of Physics: Conference Series 903 (1), 012024, 2017
6 2017 Probing the in-plane electron spin polarization in Ge/ C Zucchetti, A Ballabio, D Chrastina, S Cecchi, M Finazzi, M Virgilio, ...
Physical Review B 101 (11), 115408, 2020
5 2020 
Federico BottegoniPolitecnico di MilanoEmail verificata su polimi.it