| The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R Vetury, NQ Zhang, S Keller, UK Mishra IEEE Transactions on electron devices 48 (3), 560-566, 2001 | 1799 | 2001 |
| Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ... Journal of applied physics 86 (8), 4520-4526, 1999 | 617 | 1999 |
| Anisotropic epitaxial lateral growth in GaN selective area epitaxy D Kapolnek, S Keller, R Vetury, RD Underwood, P Kozodoy, ... Applied Physics Letters 71 (9), 1204-1206, 1997 | 424 | 1997 |
| Current instabilities in GaN-based devices I Daumiller, D Theron, C Gaquiere, A Vescan, R Dietrich, A Wieszt, ... IEEE Electron Device Letters 22 (2), 62-64, 2001 | 202 | 2001 |
| History of GaN: High-power RF gallium nitride (GaN) from infancy to manufacturable process and beyond DW Runton, B Trabert, JB Shealy, R Vetury IEEE Microwave Magazine 14 (3), 82-93, 2013 | 165 | 2013 |
| Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers ZQ Fang, B Claflin, DC Look, DS Green, R Vetury Journal of Applied Physics 108 (6), 2010 | 142 | 2010 |
| Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham Journal of Applied Physics 113 (9), 2013 | 119 | 2013 |
| Thermometry of AlGaN/GaN HEMTs using multispectral raman features S Choi, ER Heller, D Dorsey, R Vetury, S Graham IEEE Transactions on Electron Devices 60 (6), 1898-1904, 2013 | 108 | 2013 |
| Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs RJ Trew, Y Liu, L Bilbro, W Kuang, R Vetury, JB Shealy IEEE Transactions on Microwave Theory and Techniques 54 (5), 2061-2067, 2006 | 107 | 2006 |
| High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts CH Chen, S Keller, G Parish, R Vetury, P Kozodoy, EL Hu, SP Denbaars, ... Applied physics letters 73 (21), 3147-3149, 1998 | 101 | 1998 |
| The impact of bias conditions on self-heating in AlGaN/GaN HEMTs S Choi, ER Heller, D Dorsey, R Vetury, S Graham IEEE transactions on electron devices 60 (1), 159-162, 2012 | 91 | 2012 |
| The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham Journal of Applied Physics 114 (16), 2013 | 79 | 2013 |
| Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs E Heller, S Choi, D Dorsey, R Vetury, S Graham Microelectronics Reliability 53 (6), 872-877, 2013 | 79 | 2013 |
| Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications S Lee, R Vetury, JD Brown, SR Gibb, WZ Cai, J Sun, DS Green, J Shealy 2008 IEEE International Reliability Physics Symposium, 446-449, 2008 | 74 | 2008 |
| Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers K Krishnamurthy, R Vetury, S Keller, U Mishra, MJW Rodwell, SI Long IEEE Journal of Solid-State Circuits 35 (9), 1285-1292, 2000 | 74 | 2000 |
| Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process DH Kim, M Winters, R Vetury, JB Shealy US Patent 10,355,659, 2019 | 66 | 2019 |
| Characterization of AlGaN/GaN HEMTs using gate resistance thermometry G Pavlidis, S Pavlidis, ER Heller, EA Moore, R Vetury, S Graham IEEE Transactions on Electron Devices 64 (1), 78-83, 2016 | 56 | 2016 |
| Method of manufacture for single crystal acoustic resonator devices using micro-vias SR Gibb, AY Feldman, MD Boomgarden, MP Lewis, R Vetury, JB Shealy US Patent 10,581,398, 2020 | 55 | 2020 |
| High power, wideband single crystal XBAW technology for sub-6 GHz micro RF filter applications R Vetury, MD Hodge, JB Shealy 2018 IEEE International Ultrasonics Symposium (IUS), 206-212, 2018 | 52 | 2018 |
| Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability DS Green, SR Gibb, B Hosse, R Vetury, DE Grider, JA Smart Journal of crystal growth 272 (1-4), 285-292, 2004 | 50 | 2004 |