Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2 J Feng, D Biswas, A Rajan, MD Watson, F Mazzola, OJ Clark, ...
Nano letters 18 (7), 4493-4499, 2018
254 2018 Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides MS Bahramy, OJ Clark, BJ Yang, J Feng, L Bawden, JM Riley, I Marković, ...
Nature materials 17 (1), 21-28, 2018
192 2018 Fermiology and Superconductivity of Topological Surface States in OJ Clark, MJ Neat, K Okawa, L Bawden, I Marković, F Mazzola, J Feng, ...
Physical review letters 120 (15), 156401, 2018
138 2018 Evolution of the surface structures on SrTiO (110) tuned by Ti or Sr concentration Z Wang, F Yang, Z Zhang, Y Tang, J Feng, K Wu, Q Guo, J Guo
Physical Review B—Condensed Matter and Materials Physics 83 (15), 155453, 2011
69 2011 Narrow-band anisotropic electronic structure of D Biswas, AM Ganose, R Yano, JM Riley, L Bawden, OJ Clark, J Feng, ...
Physical Review B 96 (8), 085205, 2017
58 2017 Growth of metal phthalocyanine on deactivated semiconducting surfaces steered by selective orbital coupling SR Wagner, B Huang, C Park, J Feng, M Yoon, P Zhang
Physical Review Letters 115 (9), 096101, 2015
41 2015 Reconstructions on SrTiO3 (111) surface tuned by Ti/Sr deposition J Feng, X Zhu, J Guo
Surface Science 614, 38-45, 2013
37 2013 Charge modulation and structural transformation in TaTe2 studied by scanning tunneling microscopy/spectroscopy J Feng, A Tan, S Wagner, J Liu, Z Mao, X Ke, P Zhang
Applied Physics Letters 109 (2), 2016
35 2016 Investigation of β‐Ga2 O3 Film Growth Mechanism on c ‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy B Feng, Z Li, F Cheng, L Xu, T Liu, Z Huang, F Li, J Feng, X Chen, Y Wu, ...
physica status solidi (a) 218 (4), 2000457, 2021
33 2021 Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-ray photoemission spectroscopy Y Zhao, H Gao, R Huang, Z Huang, F Li, J Feng, Q Sun, A Dingsun, ...
Scientific Reports 9 (1), 16969, 2019
28 2019 Cation stoichiometry optimization of SrTiO3 (110) thin films with atomic precision in homogeneous molecular beam epitaxy Z Wang, J Feng, Y Yang, Y Yao, L Gu, F Yang, Q Guo, J Guo
Applied Physics Letters 100 (5), 2012
28 2012 Dual quantum confinement and anisotropic spin splitting in the multivalley semimetal OJ Clark, F Mazzola, J Feng, V Sunko, I Marković, L Bawden, TK Kim, ...
Physical Review B 99 (4), 045438, 2019
25 2019 Ultrafast Triggering of Insulator–Metal Transition in Two-Dimensional VSe2 D Biswas, AJH Jones, P Majchrzak, BK Choi, TH Lee, K Volckaert, J Feng, ...
Nano Letters 21 (5), 1968-1975, 2021
18 2021 A general route to form topologically-protected surface and bulk Dirac fermions along high-symmetry lines OJ Clark, F Mazzola, I Marković, JM Riley, J Feng, BJ Yang, K Sumida, ...
Electronic Structure 1 (1), 014002, 2019
18 2019 Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag (111) Surface at High Temperature J Feng, SR Wagner, P Zhang
Scientific Reports 5 (1), 10310, 2015
18 2015 Guided growth of Ag nanoparticles on SrTiO3 (110) surface Z Zhang, J Feng, Z Wang, F Yang, Q Guo, J Guo
The Journal of chemical physics 135 (14), 2011
18 2011 Growth of SrTiO3 (110) film by oxide molecular beam epitaxy with feedback control J Feng, F Yang, Z Wang, Y Yang, L Gu, J Zhang, J Guo
AIP Advances 2 (4), 2012
16 2012 Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES Z Cheng, Z Zhang, H Sun, S Li, H Yuan, Z Wang, Y Cao, Z Shao, Q Bian, ...
APL Materials 7 (5), 2019
14 2019 The effect of annealing on the Sn-doped (− 201) β-Ga2O3 bulk B Feng, G He, X Zhang, X Chen, Z Li, L Xu, R Huang, J Feng, Y Wu, Z Jia, ...
Materials Science in Semiconductor Processing 147, 106752, 2022
13 2022 Bandgap Tailoring of Monoclinic Single‐Phase β‐(Alx Ga1−x )2 O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2 O3 /Al2 O3 Heterojunction at High … Z Li, Y Wu, B Feng, Y Li, T Liu, J Feng, X Chen, R Huang, L Xu, Z Li, N Hu, ...
physica status solidi (a) 218 (10), 2000785, 2021
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