Articoli con mandati relativi all'accesso pubblico - Necmi BiyikliUlteriori informazioni
Non disponibili pubblicamente: 2
Low-Temperature As-Grown Crystalline β-Ga2O3 Films via Plasma-Enhanced Atomic Layer Deposition
S Ilhom, A Mohammad, D Shukla, J Grasso, BG Willis, AK Okyay, N Biyikli
ACS Applied Materials & Interfaces 13 (7), 8538-8551, 2021
Mandati: US National Science Foundation
Reducing the β-Ga2O3 Epitaxy Temperature to 240 °C via Atomic Layer Plasma Processing
S Ilhom, A Mohammad, J Grasso, BG Willis, AK Okyay, N Biyikli
ACS Applied Electronic Materials 5 (1), 335-343, 2022
Mandati: US National Science Foundation
Disponibili pubblicamente: 20
Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and Al x Ga 1− x N thin films at low temperatures
C Ozgit-Akgun, E Goldenberg, AK Okyay, N Biyikli
Journal of Materials Chemistry C 2 (12), 2123-2136, 2014
Mandati: European Commission
Perovskite/perovskite planar tandem solar cells: A comprehensive guideline for reaching energy conversion efficiency beyond 30%
MI Hossain, AM Saleque, S Ahmed, I Saidjafarzoda, M Shahiduzzaman, ...
Nano Energy 79, 105400, 2021
Mandati: Research Grants Council, Hong Kong
Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
H Altuntas, I Donmez, C Ozgit-Akgun, N Biyikli
Journal of Vacuum Science & Technology A 32 (4), 2014
Mandati: European Commission
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
H Altuntas, I Donmez, C Ozgit-Akgun, N Biyikli
Journal of alloys and compounds 593, 190-195, 2014
Mandati: European Commission
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
H Altuntas, C Ozgit-Akgun, I Donmez, N Biyikli
Journal of Applied Physics 117 (15), 2015
Mandati: European Commission
Atomic layer deposition of metal oxides for efficient perovskite single-junction and perovskite/silicon tandem solar cells
MI Hossain, A Mohammad, W Qarony, S Ilhom, DR Shukla, D Knipp, ...
RSC advances 10 (25), 14856-14866, 2020
Mandati: Research Grants Council, Hong Kong
Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
S Bolat, C Ozgit-Akgun, B Tekcan, N Biyikli, AK Okyay
Applied Physics Letters 104 (24), 2014
Mandati: European Commission
Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films
S Ilhom, A Mohammad, D Shukla, J Grasso, BG Willis, AK Okyay, N Biyikli
RSC advances 10 (46), 27357-27368, 2020
Mandati: US National Science Foundation
Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
H Altuntas, T Bayrak, S Kizir, A Haider, N Biyikli
Semiconductor Science and Technology 31 (7), 075003, 2016
Mandati: European Commission
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
B Tekcan, C Ozgit-Akgun, S Bolat, N Biyikli, AK Okyay
Optical Engineering 53 (10), 107106-107106, 2014
Mandati: European Commission
Optical characteristics of nanocrystalline AlxGa1− xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
E Goldenberg, C Ozgit-Akgun, N Biyikli, A Kemal Okyay
Journal of Vacuum Science & Technology A 32 (3), 2014
Mandati: European Commission
Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
S Bolat, B Tekcan, C Ozgit-Akgun, N Biyikli, AK Okyay
Journal of Vacuum Science & Technology A 33 (1), 2015
Mandati: European Commission
Understanding the role of rf-power on AlN film properties in hollow-cathode plasma-assisted atomic layer deposition
S Ilhom, D Shukla, A Mohammad, J Grasso, B Willis, N Biyikli
Journal of Vacuum Science & Technology A 38 (2), 2020
Mandati: US National Science Foundation
Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition
H Altuntas, C Ozgit-Akgun, I Donmez, N Biyikli
IEEE Transactions on Electron Devices 62 (11), 3627-3632, 2015
Mandati: European Commission
Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors
P Deminskyi, A Haider, H Eren, TM Khan, N Biyikli
Journal of Vacuum Science & Technology A 39 (2), 2021
Mandati: Scientific and Technological Research Council of Turkey
Excitation wavelength-dependent photoluminescence decay of single quantum dots near plasmonic gold nanoparticles
Y Sun, Y Wang, H Zhu, N Jin, A Mohammad, N Biyikli, O Chen, K Chen, ...
The Journal of Chemical Physics 156 (15), 2022
Mandati: US National Science Foundation
Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
P Deminskyi, A Haider, E Kovalska, N Biyikli
Journal of Vacuum Science & Technology A 36 (1), 2018
Mandati: European Commission
Complementary spiral resonators for ultrawideband suppression of simultaneous switching noise in high-speed circuits
A Ghobadi, K Topalli, N Biyikli, AK Okyay
Progress In Electromagnetics Research C 46, 117-124, 2014
Mandati: European Commission
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