| Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers L Rebohle, J Von Borany, RA Yankov, W Skorupa, IE Tyschenko, H Fröb, ... Applied physics letters 71 (19), 2809-2811, 1997 | 278 | 1997 |
| Room‐temperature, short‐wavelength (400–500 nm) photoluminescence from silicon‐implanted silicon dioxide films W Skorupa, RA Yankov, IE Tyschenko, H Fröb, T Böhme, K Leo Applied physics letters 68 (17), 2410-2412, 1996 | 154 | 1996 |
| Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing W Skorupa, T Gebel, RA Yankov, S Paul, W Lerch, DF Downey, ... Journal of the Electrochemical Society 152 (6), G436, 2005 | 106 | 2005 |
| Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing GA Kachurin, IE Tyschenko, KS Zhuravlev, NA Pazdnikov, VA Volodin, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997 | 98 | 1997 |
| Overpressurized bubbles versus voids formed in helium implanted and annealed silicon PFP Fichtner, JR Kaschny, RA Yankov, A Mücklich, U Kreissig, ... Applied physics letters 70 (6), 732-734, 1997 | 86 | 1997 |
| Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals A Nazarov, JM Sun, W Skorupa, RA Yankov, IN Osiyuk, IP Tjagulskii, ... Applied Physics Letters 86 (15), 2005 | 79 | 2005 |
| Improvement of the oxidation behaviour of TiAl-alloys by treatment with halogens A Donchev, E Richter, M Schütze, R Yankov Intermetallics 14 (10-11), 1168-1174, 2006 | 75 | 2006 |
| Improving the oxidation resistance of TiAl-alloys with fluorine A Donchev, E Richter, M Schütze, R Yankov Journal of Alloys and Compounds 452 (1), 7-10, 2008 | 59 | 2008 |
| Carbon-mediated effects in silicon and in silicon-related materials W Skorupa, RA Yankov Materials chemistry and physics 44 (2), 101-143, 1996 | 55 | 1996 |
| Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications L Rebohle, T Gebel, RA Yankov, T Trautmann, W Skorupa, J Sun, ... Optical Materials 27 (5), 1055-1058, 2005 | 50 | 2005 |
| Proximity gettering of transition metals in separation by implanted oxygen structures W Skorupa, N Hatzopoulos, RA Yankov, AB Danilin Applied physics letters 67 (20), 2992-2994, 1995 | 49 | 1995 |
| Wave-ordered structures formed on SOI wafers by reactive ion beams VK Smirnov, DS Kibalov, SA Krivelevich, PA Lepshin, EV Potapov, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 48 | 1999 |
| The effects of the annealing temperature on the formation of helium-filled structures in silicon PFP Fichtner, JR Kaschny, M Behar, RA Yankov, A Mücklich, W Skorupa Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 47 | 1999 |
| Radiation damage and annealing behaviour of Ge+-implanted SiC Y Pacaud, J Stoemenos, G Brauer, RA Yankov, V Heera, M Voelskow, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 41 | 1996 |
| Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating GA Kachurin, KS Zhuravlev, NA Pazdnikov, AF Leier, IE Tyschenko, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997 | 40 | 1997 |
| Nucleation and growth of platelet bubble structures in He implanted silicon PFP Fichtner, JR Kaschny, A Kling, H Trinkaus, RA Yankov, A Mücklich, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998 | 38 | 1998 |
| Ultra-shallow junctions produced by plasma doping and flash lamp annealing W Skorupa, RA Yankov, W Anwand, M Voelskow, T Gebel, DF Downey, ... Materials Science and Engineering: B 114, 358-361, 2004 | 34 | 2004 |
| Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing IE Tyschenko, L Rebohle, RA Yankov, W Skorupa, A Misiuk Applied physics letters 73 (10), 1418-1420, 1998 | 34 | 1998 |
| LOW-DIMENSIONAL SYSTEMS-Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions GA Kachurin, AF Leier, KS Zhuravlev, E Tyschenko, AK Gutakovskii, ... Semiconductors 32 (11), 1371-1377, 1998 | 33* | 1998 |
| Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals GA Kachurin, SG Cherkova, DV Marin, RA Yankov, M Deutschmann Nanotechnology 19 (35), 355305, 2008 | 31 | 2008 |
