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Frédéric RICHARDEAU
Frédéric RICHARDEAU
CNRS Senior Scientist, Director of Research - Lab. LAPLACE - CNRS - University of Toulouse - France
Email verificata su laplace.univ-tlse.fr - Home page
Titolo
Citata da
Citata da
Anno
Ageing and failure modes of IGBT modules in high-temperature power cycling
V Smet, F Forest, JJ Huselstein, F Richardeau, Z Khatir, S Lefebvre, ...
IEEE transactions on industrial electronics 58 (10), 4931-4941, 2011
6962011
Survey on fault operation on multilevel inverters
P Lezana, J Pou, TA Meynard, J Rodriguez, S Ceballos, F Richardeau
IEEE Transactions on Industrial Electronics 57 (7), 2207-2218, 2009
4772009
Architecture complexity and energy efficiency of small wind turbines
A Mirecki, X Roboam, F Richardeau
IEEE Transactions on Industrial Electronics 54 (1), 660-670, 2007
3202007
Multicell converters: Derived topologies
TA Meynard, H Foch, F Forest, C Turpin, F Richardeau, L Delmas, ...
IEEE transactions on Industrial Electronics 49 (5), 978-987, 2002
2992002
Evaluation ofMonitoring as a Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by Power Cycling
V Smet, F Forest, JJ Huselstein, A Rashed, F Richardeau
IEEE Transactions on Industrial Electronics 60 (7), 2760-2770, 2012
2592012
Reliability calculation of multilevel converters: Theory and applications
F Richardeau, TTL Pham
IEEE Transactions on Industrial Electronics 60 (10), 4225-4233, 2012
2392012
Failures-tolerance and remedial strategies of a PWM multicell inverter
F Richardeau, P Baudesson, TA Meynard
IEEE Transactions on power electronics 17 (6), 905-912, 2002
1682002
Fault management of multicell converters
C Turpin, P Baudesson, F Richardeau, F Forest, TA Meynard
IEEE Transactions on Industrial Electronics 49 (5), 988-997, 2002
1592002
Use of opposition method in the test of high-power electronic converters
F Forest, JJ Huselstein, S Faucher, M Elghazouani, P Ladoux, ...
IEEE Transactions on Industrial Electronics 53 (2), 530-541, 2006
1412006
Comparative study of maximum power strategy in wind turbines
A Mirecki, X Roboam, F Richardeau
2004 IEEE International Symposium on Industrial Electronics 2, 993-998, 2004
932004
Versatile three-level FC-NPC converter with high fault-tolerance capabilities: Switch fault detection and isolation and safe postfault operation
ABB Abdelghani, HB Abdelghani, F Richardeau, JM Blaquière, F Mosser, ...
IEEE Transactions on Industrial Electronics 64 (8), 6453-6464, 2017
442017
Physical origin of the gate current surge during short-circuit operation of SiC MOSFET
F Boige, D Trémouilles, F Richardeau
IEEE Electron Device Letters 40 (5), 666-669, 2019
392019
A ZVS imbricated cell multilevel inverter with auxiliary resonant commutated poles
C Turpin, L Deprez, F Forest, F Richardeau, TA Meynard
IEEE Transactions on Power Electronics 17 (6), 874-882, 2002
392002
CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors
P Bau, M Cousineau, B Cougo, F Richardeau, N Rouger
IEEE Transactions on Power Electronics 35 (12), 13322-13332, 2020
382020
Redundancy structures for static converters
JJ Huselstein, E Sarraute, F Richardeau, T Martire
US Patent 9,184,585, 2015
382015
Using the multilevel imbricated cells topologies in the design of low-power power-factor-corrector converters
F Forest, TA Meynard, S Faucher, F Richardeau, JJ Huselstein, C Joubert
IEEE Transactions on Industrial Electronics 52 (1), 151-161, 2005
382005
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation
F Boige, F Richardeau, D Trémouilles, S Lefebvre, G Guibaud
Microelectronics Reliability 76, 500-506, 2017
372017
Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation
F Boige, F Richardeau, S Lefebvre, JM Blaquière, G Guibaud, ...
Microelectronics Reliability 88, 598-603, 2018
362018
Method and device for supply to a magnetic coupler
TA Meynard, F Forest, F Richardeau, E Laboure
US Patent 7,847,535, 2010
322010
Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation
F Boige, F Richardeau
Microelectronics Reliability 76, 532-538, 2017
312017
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