Segui
Zhong Sun
Titolo
Citata da
Citata da
Anno
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ...
Nature Communications 10 (1), 1-9, 2019
2822019
Solving matrix equations in one step with cross-point resistive arrays
Z Sun, G Pedretti, E Ambrosi, A Bricalli, W Wang, D Ielmini
Proceedings of the National Academy of Sciences 116 (10), 4123-4128, 2019
2332019
Memristive crossbar arrays for storage and computing applications
H Li, S Wang, X Zhang, W Wang, R Yang, Z Sun, W Feng, P Lin, Z Wang, ...
Advanced Intelligent Systems 3 (9), 2100017, 2021
1672021
Logic computing with stateful neural networks of resistive switches
Z Sun, E Ambrosi, A Bricalli, D Ielmini
Advanced Materials 30 (38), 1802554, 2018
1522018
One-step regression and classification with cross-point resistive memory arrays
Z Sun, G Pedretti, A Bricalli, D Ielmini
Science Advances 6 (5), eaay2378, 2020
1092020
Characteristics of different types of filaments in resistive switching memories investigated by complex impedance spectroscopy
XL Jiang, YG Zhao, YS Chen, D Li, YX Luo, DY Zhao, Z Sun, JR Sun, ...
Applied Physics Letters 102 (25), 2013
702013
In-memory computing with emerging memory devices: Status and outlook
P Mannocci, M Farronato, N Lepri, L Cattaneo, A Glukhov, Z Sun, ...
APL Machine Learning 1 (1), 2023
582023
In-memory PageRank accelerator with a cross-point array of resistive memories
Z Sun, E Ambrosi, G Pedretti, A Bricalli, D Ielmini
IEEE Transactions on Electron Devices 67 (4), 1466-1470, 2020
472020
Ferroelectricity and self-polarization in ultrathin relaxor ferroelectric films
P Miao, Y Zhao, N Luo, D Zhao, A Chen, Z Sun, M Guo, M Zhu, H Zhang, ...
Scientific Reports 6 (1), 1-9, 2016
432016
A full spectrum of computing-in-memory technologies
Z Sun, S Kvatinsky, X Si, A Mehonic, Y Cai, R Huang
Nature Electronics 6 (11), 823-835, 2023
402023
Time complexity of in-memory solution of linear systems
Z Sun, G Pedretti, P Mannocci, E Ambrosi, A Bricalli, D Ielmini
IEEE Transactions on Electron Devices 67 (7), 2945-2951, 2020
402020
Deterministic role of concentration surplus of cation vacancy over anion vacancy in bipolar memristive NiO
Z Sun, Y Zhao, M He, L Gu, C Ma, K Jin, D Zhao, N Luo, Q Zhang, N Wang, ...
ACS applied materials & interfaces 8 (18), 11583-11591, 2016
312016
Time complexity of in-memory matrix-vector multiplication
Z Sun, R Huang
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (8), 2785-2789, 2021
292021
In‐Memory Eigenvector Computation in Time O(1)
Z Sun, G Pedretti, E Ambrosi, A Bricalli, D Ielmini
Advanced Intelligent Systems 2 (8), 2000042, 2020
222020
Magnetoresistance behavior of conducting filaments in resistive-switching NiO with different resistance states
D Zhao, S Qiao, Y Luo, A Chen, P Zhang, P Zheng, Z Sun, M Guo, ...
ACS Applied Materials & Interfaces 9 (12), 10835-10846, 2017
222017
A universal, analog, in-memory computing primitive for linear algebra using memristors
P Mannocci, G Pedretti, E Giannone, E Melacarne, Z Sun, D Ielmini
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (12), 4889-4899, 2021
202021
Redundancy and analog slicing for precise in-memory machine learning—Part I: Programming techniques
G Pedretti, P Mannocci, C Li, Z Sun, JP Strachan, D Ielmini
IEEE Transactions on Electron Devices 68 (9), 4373-4378, 2021
182021
Optimization schemes for in-memory linear regression circuit with memristor arrays
S Wang, Z Sun, Y Liu, S Bao, Y Cai, D Ielmini, R Huang
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (12), 4900-4909, 2021
172021
Fast solution of linear systems with analog resistive switching memory (RRAM)
Z Sun, G Pedretti, D Ielmini
Proceedings of the 4th IEEE International Conference on Rebooting Computing …, 2019
162019
Modeling and Mitigating the Interconnect Resistance Issue in Analog RRAM Matrix Computing Circuits
Y Luo, S Wang, P Zuo, Z Sun, R Huang
IEEE Transactions on Circuits and Systems I: Regular Papers, 2022
152022
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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