Articoli con mandati relativi all'accesso pubblico - Marco PalaUlteriori informazioni
Non disponibili pubblicamente: 12
Interface traps in InAs nanowire tunnel-FETs and MOSFETs—Part I: Model description and single trap analysis in tunnel-FETs
MG Pala, D Esseni
IEEE transactions on electron devices 60 (9), 2795-2801, 2013
Mandati: Governo Italiano
Interface traps in InAs nanowire tunnel FETs and MOSFETs—Part II: Comparative analysis and trap-induced variability
D Esseni, MG Pala
IEEE transactions on electron devices 60 (9), 2802-2807, 2013
Mandati: Governo Italiano
Essential physics of the OFF-state current in nanoscale MOSFETs and tunnel FETs
D Esseni, MG Pala, T Rollo
IEEE Transactions on Electron Devices 62 (9), 3084-3091, 2015
Mandati: European Commission
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope
S Brocard, MG Pala, D Esseni
2013 IEEE International Electron Devices Meeting, 5.4. 1-5.4. 4, 2013
Mandati: Governo Italiano
Large on-current enhancement in hetero-junction tunnel-FETs via molar fraction grading
S Brocard, MG Pala, D Esseni
IEEE Electron Device Letters 35 (2), 184-186, 2014
Mandati: Governo Italiano
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
F Conzatti, MG Pala, D Esseni, E Bano
Solid-state electronics 88, 49-53, 2013
Mandati: Governo Italiano
Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs
M Pala, D Esseni
ECS Transactions 61 (2), 237, 2014
Mandati: Governo Italiano
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride
M Bouaziz, A Mahmoudi, D Romanin, JC Girard, YJ Dappe, F Bertran, ...
Physical Review B 110 (4), 045441, 2024
Mandati: Agence Nationale de la Recherche
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations
R Helleboid, J Saint-Martin, M Pala, P Dollfus, G Mugny, I Nicholson, ...
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
Mandati: Agence Nationale de la Recherche
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination
A Pilotto, A M’foukh, P Dollfus, J Saint-Martin, MG Pala
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
Mandati: Agence Nationale de la Recherche
Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials
J Park, M Pala, J Saint-Matin
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
Mandati: Agence Nationale de la Recherche
Nanowire Devices
G Ghibaudo, S Barraud, M Cassé, XP Wang, GQ Lo, DL Kwong, M Pala, ...
Beyond‐CMOS Nanodevices 2, 25-95, 2014
Mandati: A*Star, Singapore
Disponibili pubblicamente: 45
Spin-orbit coupling and phase coherence in InAs nanowires
S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ...
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010
Mandati: German Research Foundation
Superconducting proximity effect in interacting double-dot systems
J Eldridge, MG Pala, M Governale, J König
Physical Review B—Condensed Matter and Materials Physics 82 (18), 184507, 2010
Mandati: German Research Foundation
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads
M Governale, MG Pala, J König
Physical Review B 77 (13), 134513, 2008
Mandati: German Research Foundation
Nonlocal Andreev transport through an interacting quantum dot
D Futterer, M Governale, MG Pala, J König
Physical Review B—Condensed Matter and Materials Physics 79 (5), 054505, 2009
Mandati: German Research Foundation
Superconducting proximity effect in interacting quantum dots revealed by shot noise
A Braggio, M Governale, MG Pala, J König
Solid State Communications 151 (2), 155-158, 2011
Mandati: German Research Foundation
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys
C Ernandes, L Khalil, H Almabrouk, D Pierucci, B Zheng, J Avila, P Dudin, ...
npj 2D Materials and Applications 5 (1), 7, 2021
Mandati: US National Science Foundation, National Natural Science Foundation of China …
Operation and design of van der Waals tunnel transistors: A 3-D quantum transport study
J Cao, D Logoteta, S Özkaya, B Biel, A Cresti, MG Pala, D Esseni
IEEE Transactions on Electron Devices 63 (11), 4388-4394, 2016
Mandati: Government of Spain
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
D Logoteta, J Cao, M Pala, P Dollfus, Y Lee, G Iannaccone
Physical review research 2 (4), 043286, 2020
Mandati: European Commission, Governo Italiano
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