| Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe … AM Afzal, MZ Iqbal, G Dastgeer, A Ahmad, B Park Advanced Science 8 (11), 2003713, 2021 | 85 | 2021 |
| High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse AM Afzal, G Dastgeer, MZ Iqbal, P Gautam, MM Faisal ACS applied materials & interfaces 12 (17), 19625-19634, 2020 | 81 | 2020 |
| Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein Ghulam Dastgeer,* Zafar Muhammad Shahzad,* Heeyeop Chae, Yong Ho Kim, Byung ... Advanced Functional Materials, 2022 | 79 | 2022 |
| Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode G Dastgeer, MF Khan, G Nazir, AM Afzal, S Aftab, BA Naqvi, J Cha, ... ACS applied materials & interfaces 10 (15), 13150-13157, 2018 | 71 | 2018 |
| Sol-gel assisted Ag doped NiAl2O4 nanomaterials and their nanocomposites with g-C3N4 nanosheets for the removal of organic effluents A Irshad, MF Warsi, PO Agboola, G Dastgeer, M Shahid Journal of Alloys and Compounds 902, 163805, 2022 | 68 | 2022 |
| A review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic E Elahi, G Dastgeer, G Nazir, S Nisar, M Bashir, HA Qureshi, D Kim, J Aziz, ... Computational Materials Science 213, 111670, 2022 | 63 | 2022 |
| WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times AM Afzal, MZ Iqbal, G Dastgeer, G Nazir, S Mumtaz, M Usman, J Eom ACS applied materials & interfaces 12 (35), 39524-39532, 2020 | 57 | 2020 |
| p‐GeSe/n‐ReS2 Heterojunction Rectifier Exhibiting A Fast Photoresponse with Ultra‐High Frequency‐Switching Applications G Dastgeer, AM Afzal, G Nazir, N Sarwar Advanced Materials Interfaces 8 (22), 2100705, 2021 | 54 | 2021 |
| Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates G Nazir, MA Rehman, MF Khan, G Dastgeer, S Aftab, AM Afzal, Y Seo, ... ACS applied materials & interfaces 10 (38), 32501-32509, 2018 | 50 | 2018 |
| Gate modulation of the spin current in graphene/WSe2 van der Waals heterostructure at room temperature G Dastgeer, AM Afzal, SHA Jaffery, M Imran, MA Assiri, S Nisar Journal of Alloys and Compounds 919, 165815, 2022 | 48 | 2022 |
| Heteroatoms-doped hierarchical porous carbons: Multifunctional materials for effective methylene blue removal and cryogenic hydrogen storage G Nazir, A Rehman, S Hussain, AM Afzal, G Dastgeer, MA Rehman, ... Colloids and Surfaces A: Physicochemical and Engineering Aspects 630, 127554, 2021 | 48 | 2021 |
| Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor G Dastgeer, H Abbas, DY Kim, J Eom, C Choi physica status solidi (RRL)–Rapid Research Letters 15 (1), 2000473, 2021 | 44 | 2021 |
| Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode AM Afzal, Y Javed, NA Shad, MZ Iqbal, G Dastgeer, MM Sajid, S Mumtaz Nanoscale 12 (5), 3455-3468, 2020 | 44 | 2020 |
| Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching G Dastgeer, AM Afzal, J Aziz, S Hussain, SHA Jaffery, D Kim, M Imran, ... Materials 14 (24), 7535, 2021 | 43 | 2021 |
| Black phosphorus-IGZO van der Waals diode with low-resistivity metal contacts G Dastgeer, MF Khan, J Cha, AM Afzal, KH Min, BM Ko, H Liu, S Hong, ... ACS applied materials & interfaces 11 (11), 10959-10966, 2019 | 37 | 2019 |
| Atomically engineered, high-speed non-volatile flash memory device exhibiting multibit data storage operations G Dastgeer, S Nisar, A Rasheed, K Akbar, VD Chavan, D Kim, ... Nano Energy 119, 109106, 2024 | 36 | 2024 |
| Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering G Dastgeer, S Nisar, ZM Shahzad, A Rasheed, D Kim, SHA Jaffery, ... Advanced Science 10 (1), 2204779, 2023 | 36 | 2023 |
| Exploring the charge storage mechanism in high performance Co@MnO2 based hybrid supercapacitors using Randles–Ševčík and Dunn’s models GD Amir M Afzal Journal of Applied Electrochemistry, 2023 | 35* | 2023 |
| A review on two-dimensional (2D) perovskite material-based solar cells to enhance the power conversion efficiency E Elahi, G Dastgeer, AS Siddiqui, SA Patil, MW Iqbal, PR Sharma Dalton Transactions 51 (3), 797-816, 2022 | 34 | 2022 |
| Thickness‐Dependent, Gate‐Tunable Rectification and Highly Sensitive Photovoltaic Behavior of Heterostructured GeSe/WS2 p–n Diode SHA Jaffery, J Kim, G Dastgeer, M Hussain, A Ali, S Hussain, J Eom, ... Advanced Materials Interfaces 7 (23), 2000893, 2020 | 33 | 2020 |
AMIR MUHAMMAD AFZALResearch Associate, Kwangwoon University, Seoul South KoreaEmail verificata su sju.ac.kr
