| Fully-screened polarization-induced electric fields in blue∕ violet InGaN∕ GaN light-emitting devices grown on bulk GaN G Franssen, T Suski, P Perlin, R Bohdan, A Bercha, W Trzeciakowski, ... Applied Physics Letters 87 (4), 2005 | 53 | 2005 |
| A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal T Suski, G Franssen, P Perlin, R Bohdan, A Bercha, P Adamiec, F Dybala, ... Applied physics letters 84 (8), 1236-1238, 2004 | 49 | 2004 |
| Pressure and temperature tuning of laser diodes W Trzeciakowski, A Bercha, F Dybala, R Bohdan, P Adamiec, O Mariani physica status solidi (b) 244 (1), 179-186, 2007 | 39 | 2007 |
| Band Structure and Condenson States in In4Se3 Crystals DM Bercha, LY Kharkhalis, AI Bercha, M Sznajder physica status solidi (b) 203 (2), 427-440, 1997 | 38 | 1997 |
| Pressure-tuned InGaAsSb∕ AlGaAsSb diode laser with 700nm tuning range P Adamiec, A Salhi, R Bohdan, A Bercha, F Dybala, W Trzeciakowski, ... Applied physics letters 85 (19), 4292-4294, 2004 | 37 | 2004 |
| Spectroscopic method of strain analysis in semiconductor quantum-well devices ML Biermann, S Duran, K Peterson, A Gerhardt, JW Tomm, A Bercha, ... Journal of applied physics 96 (8), 4056-4065, 2004 | 30 | 2004 |
| Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning R Bohdan, A Bercha, W Trzeciakowski, F Dybała, B Piechal, MB Sanayeh, ... Journal of Applied Physics 104 (6), 2008 | 29 | 2008 |
| III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources G Muziol, M Hajdel, M Siekacz, H Turski, K Pieniak, A Bercha, ... Japanese Journal of Applied Physics 61 (SA), SA0801, 2021 | 21 | 2021 |
| Wavelength tuning of laser diodes using hydrostatic pressure F Dybala, P Adamiec, A Bercha, R Bohdan, W Trzeciakowski Optical Devices for Fiber Communication IV 4989, 181-188, 2003 | 19 | 2003 |
| Nature of features of band spectrum of crystal In 4 Se 3 DM Bercha, OB Mitin, LY Kharkhalis, AI Bercha Fizika Tverdogo Tela 37 (11), 3233-3240, 1995 | 19 | 1995 |
| Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range P Podemski, A Maryński, P Wyborski, A Bercha, W Trzeciakowski, G Sęk Journal of Luminescence 212, 300-305, 2019 | 17 | 2019 |
| Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice VG Litovchenko, DV Korbutyak, AI Bercha, YV Kryuchenko, SG Krylyuk, ... Applied Physics Letters 78 (26), 4085-4087, 2001 | 17 | 2001 |
| Anomalous differential resistance change at the oscillation threshold in quantum-well laser diodes PG Eliseev, P Adamiec, A Bercha, F Dybala, R Bohdan, ... IEEE journal of quantum electronics 41 (1), 9-14, 2005 | 15 | 2005 |
| Low-temperature photoluminescence of short-period GaAs/AlAs superlattices VG Litovchenko, AI Bercha, DV Korbutyak, VI Gavrilenko, K Ploog Thin Solid Films 217 (1-2), 62-67, 1992 | 15 | 1992 |
| The Band Structure of CdSb, ZnSb and In4Se3 Orthorhombic Crystals under Deformations and Modelling of Superlattices DM Bercha, OB Mitin, IM Rarenko, LY Kharkhalis, AI Bercha Fizika i Tekhnika Poluprovodnikov 28, 1249, 1994 | 14 | 1994 |
| A fiber feedthrough for a semiconductor laser located in a high hydrostatic pressure cell R Bohdan, A Bercha, P Adamiec, F Dybala, W Trzeciakowski Instruments and Experimental Techniques 47 (3), 422-424, 2004 | 13 | 2004 |
| Effect of pressure and temperature on AlGaInP and AlGaAs laser diodes A Bercha, P Adamiec, F Dybala, R Bohdan, W Trzeciakowski Physics and Simulation of Optoelectronic Devices XI 4986, 613-620, 2003 | 13 | 2003 |
| Properties of the band structure of In4Se3 crystals DM Bercha, OB Mitin, LY Kharkhalis, AI Bercha Physics of the Solid State 37 (11), 1778-1781, 1995 | 13 | 1995 |
| Tunable laser in 1575 nm–1225 nm range achieved by pressure tuning combined with grating tuning F Dybala, A Bercha, P Adamiec, R Bohdan, W Trzeciakowski physica status solidi (b) 244 (1), 219-223, 2007 | 12 | 2007 |
| Hydrostatic and uniaxial effects in InGaN/GaN quantum wells W Trzeciakowski, A Bercha, M Gładysiewicz-Kudrawiec J. Appl. Phys 124 (20), 205701, 2018 | 11 | 2018 |
