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| The role of millimeter-wave technologies in 5G/6G wireless communications W Hong, ZH Jiang, C Yu, D Hou, H Wang, C Guo, Y Hu, L Kuai, Y Yu, ... IEEE Journal of Microwaves 1 (1), 101-122, 2021 | 618 | 2021 |
| 130-GHz On-Chip Meander Slot Antennas with Stacked Dielectric Resonators in Standard CMOS Technology D Hou, YZ Xiong, WL Goh, SM Hu, W Hong, M Madihian in IEEE Trans. Antennas Propag, 2011 | 107 | 2011 |
| Elimination of scan blindness with compact defected ground structures in microstrip phased array DB Hou, S Xiao, BZ Wang, L Jiang, J Wang, W Hong IET microwaves, antennas & propagation 3 (2), 269-275, 2009 | 91 | 2009 |
| D-band on-chip higher-order-mode dielectric-resonator antennas fed by half-mode cavity in CMOS technology D Hou, W Hong, WL Goh, J Chen, YZ Xiong, S Hu, M Madihian IEEE Antennas and Propagation Magazine 56 (3), 80-89, 2014 | 75 | 2014 |
| A D-Band Cascode Amplifier With 24.3 dB Gain and 7.7 dBm Output Power in 0.13 m SiGe BiCMOS Technology D Hou, YZ Xiong, WL Goh, W Hong, M Madihian IEEE microwave and wireless components letters 22 (4), 191, 2012 | 66 | 2012 |
| Silicon-based On-chip Antenna Design for Millimeter-wave/THz Applications D Hou, YZ Xiong, W Hong, WL Goh, J Chen | 47* | |
| A 270 GHz× 9 multiplier chain MMIC with on-chip dielectric-resonator antenna D Hou, J Chen, P Yan, W Hong IEEE Transactions on Terahertz Science and Technology 8 (2), 224-230, 2018 | 45 | 2018 |
| Distributed modeling of six-port transformer for millimeter-wave SiGe BiCMOS circuits design D Hou, W Hong, WL Goh, YZ Xiong, MA Arasu, J He, J Chen, M Madihian IEEE transactions on microwave theory and techniques 60 (12), 3728-3738, 2012 | 41 | 2012 |
| A 24–30-GHz TRX front-end with high linearity and load-variation insensitivity for mm-wave 5G in 0.13-μm SiGe BiCMOS Z Li, J Chen, D Hou, H Li, L Wang, P Zhou, W Hong IEEE Transactions on Microwave Theory and Techniques 69 (10), 4561-4575, 2021 | 39 | 2021 |
| Design and implementation of a full-digital beamforming array with nonreciprocal Tx/Rx beam patterns C Guo, W Hong, L Tian, ZH Jiang, J Zhou, J Chen, H Wang, Z Yu, C Yu, ... IEEE Antennas and Wireless Propagation Letters 19 (11), 1978-1982, 2020 | 39 | 2020 |
| A 250-GHz differential SiGe amplifier with 21.5-dB gain for sub-THz transmitters H Li, J Chen, D Hou, P Zhou, J Yu, P Yan, L Peng, H Lu, W Hong IEEE Transactions on Terahertz Science and Technology 10 (6), 624-633, 2020 | 38 | 2020 |
| A W-band 6-bit phase shifter with 7 dB gain and 1.35° RMS phase error in 130 nm SiGe BiCMOS H Li, J Chen, D Hou, W Hong IEEE Transactions on Circuits and Systems II: Express Briefs 67 (10), 1839-1843, 2019 | 38 | 2019 |
| A Ka-Band Switchable LNA With 2.4-dB NF Employing a Varactor-Based Tunable Network Z Wang, D Hou, P Zhou, H Li, Z Li, J Chen, W Hong IEEE Microwave and Wireless Components Letters 31 (4), 385-388, 2021 | 37 | 2021 |
| A 280-325 GHz frequency multiplier chain with 2.5 dBm peak output power P Zhou, J Chen, P Yan, Z Chen, D Hou, W Hong 2019 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2019 | 25 | 2019 |
| A 300-GHz transmitter front end with− 4.1-dBm peak output power for sub-THz communication using 130-nm SiGe BiCMOS technology J Yu, J Chen, P Zhou, Z Li, H Li, P Yan, D Hou, W Hong IEEE Transactions on Microwave Theory and Techniques 69 (11), 4925-4936, 2021 | 24 | 2021 |
| A 150-GHz transmitter with 12-dBm peak output power using 130-nm SiGe: C BiCMOS process P Zhou, J Chen, P Yan, J Yu, H Li, D Hou, H Gao, W Hong IEEE Transactions on Microwave Theory and Techniques 68 (7), 3056-3067, 2020 | 24 | 2020 |
| A high-efficiency E-band SiGe HBT frequency tripler with broadband performance P Zhou, J Chen, H Li, D Hou, P Yan, C Yu, W Hong 2018 IEEE/MTT-S International Microwave Symposium-IMS, 690-693, 2018 | 24 | 2018 |
| W-band scalable 2× 2 phased-array transmitter and receiver chipsets in SiGe BiCMOS for high data-rate communication H Li, J Chen, D Hou, Z Li, R Zhou, Z Chen, P Yan, W Hong IEEE Journal of Solid-State Circuits 57 (9), 2685-2701, 2022 | 23 | 2022 |
| A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm PSAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS J Yu, J Chen, P Zhou, H Li, Z Wang, Z Li, Z Chen, P Yan, D Hou, H Gao, ... IEEE Journal of Solid-State Circuits 58 (2), 332-344, 2022 | 19 | 2022 |
