Michael Shur

Citata da

	Tutte	Dal 2019
Citazioni	79388	20001
Indice H	123	65
i10-index	1011	474

4100

2050

1025

3075

1985198619871988198919901991199219931994199519961997199819992000200120022003200420052006200720082009201020112012201320142015201620172018201920202021202220232024251 323 396 300 436 436 460 449 492 414 587 751 956 1026 1191 1269 1246 1617 1842 2049 2229 2331 2307 2646 2685 2791 2894 2875 3343 3260 3352 3499 3544 3605 4084 4078 3699 2965 2793 2367

Accesso pubblico

Visualizza tutto

64 articoli

54 articoli

Disponibili

Non disponibili

In base ai mandati di finanziamento

Coautori

Remis GaskaUVTON, Inc.Email verificata su uvton.com
Grigory SiminUniversity of South CarolinaEmail verificata su engr.sc.edu
Max ShatalovCVD Equipment CorporationEmail verificata su cvdequipment.com
Taiichi OtsujiRIEC, Tohoku UniversityEmail verificata su riec.tohoku.ac.jp
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDEmail verificata su unipress.waw.pl
Maxim RyzhiiS. Associate Professor, University of AizuEmail verificata su u-aizu.ac.jp
Nezih PalaElectrical & Computer Engineering, Florida International UniversityEmail verificata su fiu.edu
Vladimir MitinSUNY Distinguished Professor, University at BuffaloEmail verificata su buffalo.edu
Kwyro LeeProfessor of Electrical Engineering, KAISTEmail verificata su kaist.ac.kr
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLAEmail verificata su seas.ucla.edu
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Email verificata su soire.renet.ru
Dmitry VekslerHRL LaboratoryEmail verificata su hrl.com
Qhalid FareedTexas InstrumentsEmail verificata su ti.com
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRSEmail verificata su umontpellier.fr
Guanxiong LiuUniversity of California RiversideEmail verificata su ee.ucr.edu
Juras MickeviciusVilnius UniversityEmail verificata su ff.vu.lt
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles CoulombEmail verificata su umontpellier.fr
Mikhail GaevskiCVD Equipment CorporationEmail verificata su CVDEquipment.com
Hadis MorkoçVirginia Commonwealth UniversityEmail verificata su vcu.edu
Jimmy XuCharles C. Tillinghast Jr. 1932 University Professor of Engineering and Physics, Brown UniversityEmail verificata su Brown.edu

Segui

Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

Email verificata su rpi.edu - Home page

semiconductors


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2169	2001
Handbook series on semiconductor parameters M Levinshtein World Scientific, 1997	2029*	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1493	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990	1338	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 1996	1291	1996
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	1036	2013
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	990	2002
Threshold switching in chalcogenide‐glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Journal of Applied Physics 51 (6), 3289-3309, 1980	832	1980
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	685	2000
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	684	1999
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	640	2005
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	599	1991
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	593	1984
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	543	2006
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	536	2012
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	529	1994
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	515	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	502	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	480	2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	472	1997

Il sistema al momento non può eseguire l'operazione. Riprova più tardi.

Articoli 1–20

Citazioni per anno

Citazioni duplicate

Citazioni unite

Aggiungi coautoriCoautori

Segui

Citata da

Coautori