Giant Spin-Orbit Bowing in B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje
Physical review letters 97 (6), 067205, 2006
497 2006 Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices RM Farrell, EC Young, F Wu, SP DenBaars, JS Speck
Semiconductor Science and Technology 27 (2), 024001, 2012
313 2012 Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy AE Romanov, EC Young, F Wu, A Tyagi, CS Gallinat, S Nakamura, ...
Journal of Applied Physics 109 (10), 2011
193 2011 Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact JT Leonard, EC Young, DA Cohen, BP Yonkee, T Margalith, ...
Applied Physics Letters 107 (9), 091105, 2015
168 2015 Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy DG Cooke, FA Hegmann, EC Young, T Tiedje
Applied physics letters 89 (12), 2006
163 2006 Surfactant enhanced growth of GaNAs and InGaNAs using bismuth S Tixier, M Adamcyk, EC Young, JH Schmid, T Tiedje
Journal of crystal growth 251 (1-4), 449-454, 2003
152 2003 Hybrid tunnel junction contacts to III–nitride light-emitting diodes EC Young, BP Yonkee, F Wu, SH Oh, SP DenBaars, S Nakamura, ...
Applied Physics Express 9 (2), 022102, 2016
149 2016 Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (112¯ 2) GaN free standing substrates A Tyagi, F Wu, EC Young, A Chakraborty, H Ohta, R Bhat, K Fujito, ...
Applied Physics Letters 95 (25), 2009
133 2009 Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN MB McLaurin, A Hirai, E Young, F Wu, JS Speck
Japanese journal of applied physics 47 (7R), 5429, 2008
128 2008 Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy DA Browne, EC Young, JR Lang, CA Hurni, JS Speck
Journal of Vacuum Science & Technology A 30 (4), 2012
111 2012 Influence of bismuth incorporation on the valence and conduction band edges of GaAs1− xBix G Pettinari, A Polimeni, M Capizzi, JH Blokland, PCM Christianen, ...
Applied Physics Letters 92 (26), 2008
106 2008 Bismuth surfactant growth of the dilute nitride GaNxAs1− x EC Young, S Tixier, T Tiedje
Journal of crystal growth 279 (3-4), 316-320, 2005
106 2005 Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy EC Young, F Wu, AE Romanov, A Tyagi, CS Gallinat, SP DenBaars, ...
Applied physics express 3 (1), 011004, 2010
102 2010 Growth and properties of the dilute bismide semiconductor GaAs1− xBix a complementary alloy to the dilute nitrides T Tiedje, EC Young, A Mascarenhas
International Journal of Nanotechnology 5 (9-12), 963-983, 2008
102 2008 Bi isoelectronic impurities in GaAs S Francoeur, S Tixier, E Young, T Tiedje, A Mascarenhas
Physical Review B—Condensed Matter and Materials Physics 77 (8), 085209, 2008
99 2008 Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction BP Yonkee, EC Young, SP DenBaars, S Nakamura, JS Speck
Applied Physics Letters 109, 191104, 2016
94 2016 Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x S Tixier, SE Webster, EC Young, T Tiedje, S Francoeur, A Mascarenhas, ...
Applied Physics Letters 86 (11), 2005
94 2005 Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact BP Yonkee, EC Young, C Lee, JT Leonard, SP DenBaars, JS Speck, ...
Optics Express 24 (7), 7816-7822, 2016
86 2016 Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface H Ohta, F Wu, A Tyagi, A Chakraborty, JS Speck, SP DenBaars, ...
US Patent 9,159,553, 2015
81 2015 444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ...
Applied Physics Letters 100 (2), 2012
76 2012 
Jim SpeckProfessor of Materials, UCSBEmail verificata su ucsb.edu