Statistical Variability in Scaled Generations of n-channel UTB-FD-SOI MOSFETs Under the Influence of RDF, LER, OTF and MGG S Markov, AS Mohd Zain, B Cheng, A Asenov SOI Conference (SOI), 2012 IEEE International, 1-2, 2012 | 32 | 2012 |
A fiber optic sensor based on Mach‐Zehnder interferometer structure for food composition detection HA Razak, NH Sulaiman, H Haroon, AS Mohd Zain Microwave and Optical Technology Letters 60 (4), 920-925, 2018 | 28 | 2018 |
Development of LPG leakage detector system using arduino with Internet of Things (IoT) MA Hannan, ASM Zain, F Salehuddin, H Hazura, SK Idris, AR Hanim, ... Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018 | 23 | 2018 |
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX Y Yang, S Markov, B Cheng, AS Mohd Zain, X Liu, A Asenov IEEE, 2013 | 21 | 2013 |
Comprehensive identification of sensitive and stable ISFET sensing layer high-k gate based on ISFET/electrolyte models AM Dinar, ASM Zain, F Salehuddin Int. J. Electr. Comput. Eng 9 (2), 926-933, 2019 | 20 | 2019 |
Modeling and simulation of electrolyte pH change in conventional ISFET using commercial Silvaco TCAD AM Dinar, ASM Zain, F Salehuddin, ML Attiah, MK Abdulhameed IOP Conference series: materials science and engineering 518 (4), 042020, 2019 | 17 | 2019 |
TAGUCHI MODELING WITH THE INTERACTION TEST FOR HIGHER DRIVE CURRENT IN WSI^ sub X^/TIO^ sub 2^ CHANNEL VERTICAL DOUBLE GATE NMOS DEVICE KE Kaharudin, F Salehuddin, ASM Zain, M Aziz Journal of Theoretical and Applied Information Technology 90 (1), 185, 2016 | 15 | 2016 |
Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device KE Kaharudin, F Salehuddin, ASM Zain, MNI Abd Aziz Journal of Mechanical Engineering and Sciences 9, 1614-1627, 2015 | 15* | 2015 |
Comparison of electrical characteristics between Bulk MOSFET and Silicon-on-insulator (SOI) MOSFET MNIA Aziz, F Salehuddin, ASM Zain, KE Kaharudin, SA Radzi Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 6 …, 2014 | 15 | 2014 |
Effect of channel length variation on analog and RF performance of junctionless double gate vertical MOSFET KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan J. Eng. Sci. Technol 14 (4), 2410-2430, 2019 | 14 | 2019 |
Modal interferometer structures and splicing techniques of fiber optic sensor AR Hanim, H Hazura, ASM Zain, SK Idris Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018 | 14 | 2018 |
Utilizing of CMOS ISFET sensors in DNA applications detection: A systematic review AM Dinar, ASM Zain, F Salehuddin Jour Adv Res. Dyn. Control Syst 10 (04), 569-583, 2018 | 14 | 2018 |
Analysis of process parameter effect on DIBL in n-channel MOSFET device using L27 orthogonal array F Salehuddin, KE Kaharudin, ASM Zain, AKM Yamin, I Ahmad AIP Conference Proceedings 1621 (1), 322-328, 2014 | 13 | 2014 |
Comprehensive Study of the Statistical Variability in a 22nm Fully-Depleted Ultra-Thin-Body SOI MOSFET AS Mohd Zain, S Markov, B Cheng, A Asenov Solid State Electronics, 1-7, 2013 | 13* | 2013 |
Comprehensive Study of the Statistical Variability in a 22nm Fully-Depleted Ultra-Thin Body SOI MOSFET AS Mohd Zain, S Markov, B Cheng, X Wang, A Asenov EuroSOI 2012, 45-46, 2012 | 13* | 2012 |
Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad Indonesian Journal of Electrical Engineering and Computer Science 18 (2 …, 2020 | 12 | 2020 |
CMOS ISFET device for DNA sequencing: device compensation, application requirements and recommendations AM Dinar, ASM Zain, F Salehuddin Int. J. Appl. Eng. Res 12 (21), 11015-11028, 2017 | 12 | 2017 |
Multi-response optimization in vertical double gate PMOS device using Taguchi method and grey relational analysis KE Kaharudin, F Salehuddin, ASM Zain, M Aziz, Z Manap, NA Abd Salam, ... 2016 IEEE International Conference on Semiconductor Electronics (ICSE), 64-68, 2016 | 12 | 2016 |
Geometric and process design of ultra-thin junctionless double gate vertical MOSFETs. KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan International Journal of Electrical & Computer Engineering (2088-8708) 9 (4), 2019 | 10 | 2019 |
Optimization of electrical properties in TiO2/WSix-based vertical DG-MOSFET using Taguchi-based GRA with ANN KE Kaharudin, F Salehuddin, ASM Zain Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018 | 10 | 2018 |