| Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes R Jain, W Sun, J Yang, M Shatalov, X Hu, A Sattu, A Lunev, J Deng, ... Applied Physics Letters 93 (5), 2008 | 124 | 2008 |
| Large chip high power deep ultraviolet light-emitting diodes M Shatalov, W Sun, Y Bilenko, A Sattu, X Hu, J Deng, J Yang, M Shur, ... Applied physics express 3 (6), 062101, 2010 | 51 | 2010 |
| Device self‐heating effects in deep UV LEDs studied by systematic variation in pulsed current injection ML Reed, M Wraback, A Lunev, Y Bilenko, X Hu, A Sattu, J Deng, ... physica status solidi c 5 (6), 2053-2055, 2008 | 18 | 2008 |
| Novel approaches to microwave switching devices using nitride technology G Simin, J Wang, B Khan, J Yang, A Sattu, R Gaska, M Shur International Journal of High Speed Electronics and Systems 20 (01), 219-227, 2011 | 10 | 2011 |
| AlGaN/GaN Microwave switch with hybrid slow and fast gate design A Sattu, J Yang, M Shur, R Gaska, G Simin IEEE electron device letters 31 (12), 1389-1391, 2010 | 10 | 2010 |
| Small-and large-signal performance of III-nitride RF switches with hybrid fast/slow gate design AK Sattu, J Yang, R Gaska, MB Khan, M Shur, G Simin IEEE microwave and wireless components letters 21 (6), 305-307, 2011 | 9 | 2011 |
| Non‐catalyst growth and characterization of a ‐plane AlGaN nanorods ME Gaevski, W Sun, J Yang, V Adivarahan, A Sattu, I Mokina, M Shatalov, ... physica status solidi (a) 203 (7), 1696-1699, 2006 | 9 | 2006 |
| Low-loss AlInN/GaN microwave switch A Sattu, D Billingsley, J Deng, J Yang, G Simin, M Shur, R Gaska Electronics letters 47 (15), 863-865, 2011 | 7 | 2011 |
| Enhanced Power and Breakdown in III-N RF Switches With a Slow Gate A Sattu, J Deng, D Billingsley, J Yang, M Shur, R Gaska, G Simin IEEE electron device letters 32 (6), 749-751, 2011 | 6 | 2011 |
| Degradation mechanisms beyond device self-heating in deep ultraviolet light emitting diodes CG Moe, ML Reed, GA Garrett, GD Metcalfe, T Alexander, H Shen, ... 2009 IEEE International Reliability Physics Symposium, 94-97, 2009 | 3 | 2009 |
| Power Packaging for Automotive Semiconductors–Now and Future A Sattu | | 2019 |
| Aluminum Gallium Nitride/gallium Nitride HFET with Composite" slow/fast" Gate AK Sattu University of South Carolina, 2011 | | 2011 |
| Al (x) In (1-x) N/GaN Heterostructures Grown by MEMOCVD D Billingsley, A Sattu, X Hu, J Deng, G Simin, M Shatalov, M Shur, J Yang, ... Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
| AlGaN/GaN HFET with composite'slow/fast'gate AK Sattu | | 2011 |
| Traveling-wave microwave switch using III-N gateless devices with capacitively-coupled contacts J Wang, B Khan, A Sattu, J Yang, R Gaska, M Shur, G Simin 2009 International Semiconductor Device Research Symposium, 1-2, 2009 | | 2009 |
| Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template S Miasojedovas, S Jursenas, E Kuokstis, A Zukauskas, ME Gaevski, J Lee, ... Optica Applicata 36 (2/3), 351, 2006 | | 2006 |
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicEmail verificata su rpi.edu