A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
648 2016 Electrical Spin Driving by A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
146 2018 Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
111 2018 Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ...
Nanotechnology 23 (21), 215204, 2012
88 2012 Single layer MoS2 nanoribbon field effect transistor D Kotekar-Patil, J Deng, SL Wong, CS Lau, KEJ Goh
Applied Physics Letters 114 (1), 2019
52 2019 SOI technology for quantum information processing S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2016
52 2016 Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction H Bohuslavskyi, D Kotekar-Patil, R Maurand, A Corna, S Barraud, ...
Applied Physics Letters 109 (19), 2016
41 2016 Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry A Crippa, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, AO Orlov, ...
Nano letters 17 (2), 1001-1006, 2017
35 2017 Si CMOS platform for quantum information processing L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
34 2016 Toward valley‐coupled spin qubits KEJ Goh, F Bussolotti, CS Lau, D Kotekar‐Patil, ZE Ooi, JY Chee
Advanced Quantum Technologies 3 (6), 1900123, 2020
30 2020 Pauli spin blockade in CMOS double quantum dot devices D Kotekar-Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, ...
Phys. Status Solidi B 254, No. 3, 1600581 (2017), 2017
21 2017 MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor N Sharma, S Kumar, A Gupta, SB Dolmanan, DSK Patil, ST Tan, ...
Sensors and Actuators A: Physical 342, 113647, 2022
20 2022 Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons D Kotekar-Patil, J Deng, SL Wong, KEJ Goh
ACS Applied Electronic Materials 1 (11), 2202-2207, 2019
20 2019 Quasiballistic quantum transport through Ge/Si core/shell nanowires D Kotekar-Patil, BM Nguyen, J Yoo, SA Dayeh, SM Frolov
Nanotechnology 28 (38), 385204, 2017
19 2017 Mass production of silicon MOS-SETs: Can we live with nano-devices’ variability? X Jehl, B Roche, M Sanquer, B Voisin, R Wacquez, V Deshpande, ...
Procedia Computer Science 7, 266-268, 2011
10 2011 Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface AS Razeen, D Kotekar-Patil, EX Tang, G Yuan, J Ong, K Radhakrishnan, ...
Materials Science in Semiconductor Processing 173, 108115, 2024
4 2024 Excited state spectroscopy and spin splitting in single layer MoS 2 quantum dots P Kumar, H Kim, S Tripathy, K Watanabe, T Taniguchi, KS Novoselov, ...
Nanoscale 15 (45), 18203-18211, 2023
4 2023 SOI platform for spin qubits S De Franceschi, R Maurand, A Corna, D Kotekar-Patil, X Jehl, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
4 2016 Microstructural characterization of AlxGa1− xN/GaN high electron mobility transistor layers on 200 mm Si (111) substrates Z Aabdin, Z Mahfoud, AS Razeen, HK Hui, DK Patil, G Yuan, J Ong, ...
Applied Physics Letters 123 (14), 2023
3 2023 Ultrasensitive Real-Time Detection of Pb2+ Ions Using g-C3 N4 Nanosheets N Sharma, AK Sakthivel, S Alwarrapan, A Gupta, AS Razeen, DSK Patil, ...
IEEE Sensors Journal 23 (10), 10308-10315, 2023
3 2023 
Romain MaurandCea GrenobleEmail verificata su cea.fr