Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
746 2016 Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
458 2015 In situ epitaxial MgB2 thin films for superconducting electronicsX Zeng, AV Pogrebnyakov, A Kotcharov, JE Jones, XX Xi, EM Lysczek, ...
Nature materials 1 (1), 35-38, 2002
449 2002 Piezoelectric charge densities in AlGaN/GaN HFETs PM Asbeck, ET Yu, SS Lau, GJ Sullivan, J Van Hove, J Redwing
Electronics letters 33 (14), 1230-1231, 1997
433 1997 Benchmarking monolayer MoS2 and WS2 field-effect transistors A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das
Nature communications 12 (1), 693, 2021
404 2021 Bottom-up assembly of large-area nanowire resonator arrays M Li, RB Bhiladvala, TJ Morrow, JA Sioss, KK Lew, JM Redwing, ...
Nature nanotechnology 3 (2), 88-92, 2008
395 2008 GaN-based devices using (Ga, AL, In) N base layers RP Vaudo, JM Redwing, MA Tischler, DW Brown
US Patent 6,156,581, 2000
346 2000 High-field superconductivity in alloyed V Braccini, A Gurevich, JE Giencke, MC Jewell, CB Eom, DC Larbalestier, ...
Physical Review B—Condensed Matter and Materials Physics 71 (1), 012504, 2005
329 2005 Crystallographic wet chemical etching of GaN DA Stocker, EF Schubert, JM Redwing
Applied Physics Letters 73 (18), 2654-2656, 1998
327 1998 High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same J Redwing, MA Tischler
US Patent 5,874,747, 1999
297 1999 Silicon nanowire array photoelectrochemical cells AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk
Journal of the American Chemical Society 129 (41), 12344-12345, 2007
281 2007 A roadmap for electronic grade 2D materials N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
278 2019 III-V nitride substrate boule and method of making and using the same RP Vaudo, JS Flynn, GR Brandes, JM Redwing, MA Tischler
US Patent 6,596,079, 2003
272 2003 Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire X Zhang, TH Choudhury, M Chubarov, Y Xiang, B Jariwala, F Zhang, ...
Nano letters 18 (2), 1049-1056, 2018
269 2018 Optical properties of Si-doped GaN EF Schubert, ID Goepfert, W Grieshaber, JM Redwing
Applied Physics Letters 71 (7), 921-923, 1997
269 1997 Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates KK Lew, JM Redwing
Journal of Crystal Growth 254 (1-2), 14-22, 2003
258 2003 Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ...
ACS nano 12 (2), 965-975, 2018
238 2018 Optical properties of rectangular cross-sectional ZnS nanowires Q Xiong, G Chen, JD Acord, X Liu, JJ Zengel, HR Gutierrez, JM Redwing, ...
Nano Letters 4 (9), 1663-1668, 2004
230 2004 AlGaN/GaN HEMTs grown on SiC substrates SC Binari, JM Redwing, G Kelner, W Kruppa
Electronics Letters 33 (3), 242-243, 1997
228 1997 The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes LS Yu, QZ Liu, QJ Xing, DJ Qiao, SS Lau, J Redwing
Journal of applied physics 84 (4), 2099-2104, 1998
225 1998 
Xiaoxing XiTemple UniversityEmail verificata su temple.edu