| Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ... MRS Proceedings 33 (2), 81-87, 2014 | 49 | 2014 |
| Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ... AIP Advances 4 (11), 2014 | 17 | 2014 |
| Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness R Kumar, P Mukhopadhyay, A Bag, SK Jana, A Chakraborty, S Das, ... Applied Surface Science 324, 304-309, 2015 | 12 | 2015 |
| Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ... Electronic Materials Letters 12, 232-236, 2016 | 8 | 2016 |
| Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening A Bag, R Kumar, P Mukhopadhyay, MK Mahata, A Chakraborty, S Ghosh, ... Electronic Materials Letters 11, 707-716, 2015 | 7 | 2015 |
| On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs S Ghosh, SM Dinara, M Mahata, S Das, P Mukhopadhyay, SK Jana, ... physica status solidi (a) 213 (6), 1559-1563, 2016 | 5 | 2016 |
| Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis R Kumar, P Mukhopadhyay, SK Jana, A Bag, S Ghosh, S Das, MK Mahata, ... 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 4 | 2014 |
| Universal Band Gap Determination Model for Doped Semiconductor Materials Mihir Kumar Mahata,S. Ghosh, S. Das, D. Biswas ECS Solid State Letters 4 (12), 98, 2015 | 3 | 2015 |
| Device Performance Analysis for Different Gate Locations in AlGaN/GaN HEMT by Silvaco Simulation MK Mahata, S Chatterjee, T Das, A Sarkar 2023 IEEE Devices for Integrated Circuit (DevIC), 119-123, 2023 | 1 | 2023 |
| Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode S Das, S Majumder, R Kumar, MK Mahata, SM Dinara, D Biswas 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 1 | 2014 |
| Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE MK Mahata, S Ghosh, S Jana, P Mukhopadhyay, A Bag, S Mukulika, ... Proceedings of the 2014 IEEE Students' Technology Symposium, 390-392, 2014 | 1 | 2014 |
| Performance Analysis of Dielectrically Modulated Both Sided Cavity TFET Biosensor Using III-V Compound Semiconductor D Nath, MK Mahata 2024 Parul International Conference on Engineering and Technology (PICET), 1-5, 2024 | | 2024 |
| Performance Analysis of New Dual-Pocket Tunnel-FET-based Biosensor T Das, A Sarkar, MK Mahata 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | | 2022 |
| A Novel Architecture of a fault-tolerant Memory System based on Missing Data Imputation S Dey, C Chakraborty, S Jana, MK Mahata, A Karmakar 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | | 2022 |
| An FPGA-Based Design of a Fault-Tolerant Shared Memory Structure S Dey, MK Mahata, A Karmakar International Journal of Electronics, Communications, and Measurement …, 2022 | | 2022 |
| Unexpected two-step response in AlGaAs/GaAs heterostructure-based SBD S Chatterjee, MK Mahata International Journal of Electronics Letters 8 (2), 223-231, 2020 | | 2020 |
| PAMBE Growth and Characterization of Strained III-Nitride Barrier Heterostructures on Silicon MK Mahata IIT, Kharagpur, 2015 | | 2015 |
| Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy SK Jana, S Ghosh, SM Dinara, M Mahata, S Das, D Biswas Journal of Vacuum Science & Technology B 33 (4), 2015 | | 2015 |
| The Effect of AlN Nucleation and GaN Layer in Indium Incorporation of InGaN Grown by PA-MBE SJDB Apurba Chakraborty, Partha Mukhopadhyay, Saptarsi Ghosh, Ankush Bag ... IWPSD 2015, 2015 | | 2015 |
| Trapping Effect Analysis of AlGaN/InGaN/GaN Heterostructure by Conductance-Frequency Measurement SMDB Apurba Chakraborty, S. Ghosh, P. Mukhopadhyay, S. M. Dinara, A. Bag ... MRS Fall meeting at Boston, November 2015, 2015 | | 2015 |
Dhrubes BiswasProfessor of Electronics, Indian Institute of Technology, KharagpurEmail verificata su ece.iitkgp.ernet.in