Jean-Pierre Raskin

Jean-Pierre Raskin

Université catholique de Louvain, Engineering School of Louvain
Email verificata su uclouvain.be
Citato da 20048
Microelectronics Microwaves SOI MEMS
Cristoloveanu, Sorin

Cristoloveanu, Sorin

Grenoble INP
Email verificata su grenoble-inp.fr
Citato da 17931
micro and nanoelectronics SOI novel devices characterization models
Jian Chen

Jian Chen

Adjunct Professor, Stanford University, (Past SanDisk,WDC, AMD)
Email verificata su stanford.edu
Citato da 16344
Semiconductor Technology 3DNAND Flash Memory SOI GIDL
Aryan Afzalian

Aryan Afzalian

Université catholique de Louvain
Email verificata su uclouvain.be
Citato da 7122
nanotechnology NEGF quantum simulation electron device physics SOI
Tatsuya Yamada

Tatsuya Yamada

Toyo University
Email verificata su toyo.jp
Citato da 4786
SOI DIBL MOSFET Device Simulation
Shibnath Pathak

Shibnath Pathak

Lumentum
Email verificata su ucdavis.edu
Citato da 2096
SOI AWG Switch
Cesar Roda Neve, PhD

Cesar Roda Neve, PhD

R&D Program Manager at SOITEC
Email verificata su soitec.com
Citato da 971
semiconductors SOI RF 6G 3D
Weina Peng

Weina Peng

University of Texas at Dallas
Email verificata su utdallas.edu
Citato da 959
Nanotechnology SOI energy transfer surface defects solar cells
Jun Zhang

Jun Zhang

Nanjing University of Posts and Telecommunications
Email verificata su ieee.org
Citato da 610
Power electronics LDMOS SOI Silicon Carbide Power Electronics
Renato Giacomini

Renato Giacomini

FEI
Email verificata su fei.edu.br
Citato da 478
SOI Electronic devices CMOS simulation modeling
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