Hiroshi AMANO (天野　浩)

Hiroshi AMANO (天野　浩)

Nagoya University (名古屋大学)
Email verificata su nuee.nagoya-u.ac.jp
Citato da 62311
Semiconductor devices Opto electronics Power devices High frequency devices photocathode
Jae Kyeong Jeong

Jae Kyeong Jeong

Hanyang Univ.
Email verificata su hanyang.ac.kr
Citato da 26835
Field Effect Transistors Flexible Electronics Power Devices Oxide TFT Electroceramics
Tsunenobu Kimoto

Tsunenobu Kimoto

Kyoto University
Email verificata su kyoto-u.ac.jp
Citato da 26706
Semiconductor Physics Power Devices Semiconductor Devices
Yifeng Wu

Yifeng Wu

GaNext
Email verificata su ganext.com
Citato da 19714
Power devices GaN Power electronics
Anant Agarwal

Anant Agarwal

Professor of Electrical Engineering, Ohio State University
Email verificata su ieee.org
Citato da 16652
Wide Band Gap Semiconductors Power Devices Power Electronics Silicon Carbide
Mikael Östling

Mikael Östling

KTH Royal Institute of Technology
Email verificata su kth.se
Citato da 15184
Nanoelectronics Device technology power devices
phil mawby

phil mawby

professor of power electronics, School of Engineering, university of warwick, UK
Email verificata su warwick.ac.uk
Citato da 11746
power electronics power devices semiconductors
Ray Hua Horng

Ray Hua Horng

National Yang Ming Chiao Tung University
Email verificata su nycu.edu.tw
Citato da 10829
Power devices optoelectronicd LEDs Laser Solar cells
Jonathan J. Wierer, Jr.

Jonathan J. Wierer, Jr.

North Carolina State University, Department of Electrical and Computer Engineering
Email verificata su ncsu.edu
Citato da 10093
semiconductor devices III-nitride light-emitting diodes laser diodes power devices
Ranbir Singh

Ranbir Singh

GeneSiC, Cree, NIST, Cree Research, North Carolina State University
Email verificata su ieee.org
Citato da 7417
SiC wide bandgap Silicon Carbide power devices cryogenic
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