James W Pomeroy

James W Pomeroy

University of Bristol
Email verificata su bristol.ac.uk
Citato da 4682
Thermography Raman GaN HEMT Reliability Diamond
Meng Zhang

Meng Zhang

Xidian University
Email verificata su xidian.edu.cn
Citato da 1711
Gallium Nitride RF device power electronics GaN HEMT
Indranil Chatterjee

Indranil Chatterjee

Airbus eXpert - Semiconductor Devices, Airbus
Email verificata su airbus.com
Citato da 1101
Semiconductor Devices Radiation Effects Reliability Physics GaN HEMT
Dr. Deepak Kumar Panda

Dr. Deepak Kumar Panda

Associate Professor in ECE, Amrita Vishwa Vidyapeetham, Amaravati Campus
Email verificata su av.amrita.edu
Citato da 1055
Biosensor TFET GaN HEMT Compact device model development Solar Cell Design
Arivazhagan L

Arivazhagan L

RA @ University of Sharjah, UAE
Email verificata su srec.ac.in
Citato da 963
Device Modeling Trap Analysis Small Signal Modeling GaN HEMT
Nethaji Dharmarasu

Nethaji Dharmarasu

Principal Research Scientist, Temasek Laboratories@NTU, Singapore
Email verificata su ntu.edu.sg
Citato da 949
GaN HEMT MOCVD MBE
Xiangdong Li (李祥东)

Xiangdong Li (李祥东)

Xidian University, imec, KU Leuven
Email verificata su xidian.edu.cn
Citato da 863
GaN HEMT Reliability Power IC
June Sik Kwak

June Sik Kwak

Director, RFHIC Inc.
Email verificata su rfhic.com
Citato da 572
WBG device GaN HEMT
Manikant

Manikant

Senior Quality Manager (GaN)
Email verificata su nexperia.com
Citato da 471
GAN HEMT Reliability Wide bandgap semiconductor
Nitin Goyal

Nitin Goyal

Infineon Technologies AG
Email verificata su infineon.com
Citato da 464
GaN HEMT GaN heterostructures III-V nitrides
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