| Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system A Lavoie, H Kang, P Kumar, S Swaminathan, J Qian, F Pasquale, ... US Patent 9,617,638, 2017 | 466 | 2017 |
| Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ald system A Lavoie, H Kang, P Kumar, S Swaminathan, J Qian, F Pasquale, ... US Patent App. 14/447,203, 2016 | 466 | 2016 |
| Ultrathin atomic layer deposition film accuracy thickness control J Qian, H Kang, A Lavoie, S Matsuyama, P Kumar US Patent App. 14/664,545, 2016 | 464* | 2016 |
| Selective atomic layer deposition for gapfill using sacrificial underlayer FS Ou, P Kumar, A Lavoie, I Karim, J Qian US Patent App. 15/253,301, 2018 | 463 | 2018 |
| Selective atomic layer deposition for gapfill using sacrificial underlayer FS Ou, P Kumar, A Lavoie, I Karim, J Qian US Patent App. 15/253,301, 2018 | 463 | 2018 |
| Selective atomic layer deposition with post-dose treatment P Kumar, A Lavoie, I Karim, J Qian, FL Pasquale, BJ Van Schravendijk US Patent App. 15/201,221, 2018 | 424 | 2018 |
| Selective atomic layer deposition with post-dose treatment P Kumar, A Lavoie, I Karim, J Qian, FL Pasquale, BJ Van Schravendijk US Patent App. 15/201,221, 2018 | 424 | 2018 |
| Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer J Abel, P Agarwal, R Phillips, P Kumar, A Lavoie US Patent App. 15/703,917, 2019 | 404 | 2019 |
| Systems and methods for vapor delivery in a substrate processing system J Qian, H Kang, P Kumar, C Baldasseroni, H Landis, AK Duvall, M Sabri, ... US Patent 9,970,108, 2018 | 279 | 2018 |
| Systems and methods for vapor delivery J Qian, H Kang, P Kumar, C Baldasseroni, H Landis, AK Duvall, M Sabri, ... US Patent App. 14/798,652, 2016 | 279* | 2016 |
| High dry etch rate materials for semiconductor patterning applications A Mahorowala, I Karim, P Kumar, S Swaminathan, A Lavoie US Patent App. 10/074,543, 2018 | 164* | 2018 |
| Improved Transfer of Graphene for Gated-Schottky-Junction, Vertical, Organic, Field-Effect Transistors MG Lemaitre, EP Donoghue, MA McCarthy, B Liu, S Tongay, B Gila, ... ACS nano, 2012 | 128 | 2012 |
| Dynamic precursor dosing for atomic layer deposition P Kumar, A Lavoie, J Qian, H Kang, I Karim, FS Ou US Patent App. 10/094,018, 2018 | 74* | 2018 |
| ZnO incorporated LiFePO4 for high rate electrochemical performance in lithium ion rechargeable batteries J Lee, P Kumar, J Lee, BM Moudgil, RK Singh Journal of Alloys and Compounds 550, 536-544, 2013 | 49 | 2013 |
| Low Temperature Wet Etching to Reveal Sub-surface Damage in Sapphire Substrates P Kumar, J Lee, G Lee, S Rao, D Singh, RK Singh Applied Surface Science, 2013 | 46 | 2013 |
| Electrochemical enhancement of LiFePO4 as a cathode material by incorporating Cu flakes for lithium ion rechargeable battery J Lee, P Kumar, BM Moudgil, RK Singh Solid State Ionics 231, 18-24, 2013 | 41 | 2013 |
| Atomic layer etch methods and hardware for patterning applications P Agarwal, P Kumar, A Lavoie US Patent 9,997,371, 2018 | 34 | 2018 |
| Methods of modulating residual stress in thin films P Kumar, H Kang, J Qian, A Lavoie US Patent App. 14/708,050, 2016 | 32 | 2016 |
| Atomic layer etch, reactive precursors and energetic sources for patterning applications A Lavoie, P Agarwal, P Kumar US Patent App. 15/955,099, 2018 | 30 | 2018 |
| High dry etch rate materials for semiconductor patterning applications A Mahorowala, I Karim, P Kumar, S Swaminathan, A Lavoie US Patent App. 15/253,546, 2018 | 28 | 2018 |
