Divacancy acceptor levels in ion-irradiated silicon BG Svensson, B Mohadjeri, A Hallén, JH Svensson, JW Corbett
Physical Review B 43 (3), 2292, 1991
250 1991 Lifetime in proton irradiated silicon A Hallén, N Keskitalo, F Masszi, V Nágl
Journal of Applied Physics 79 (8), 3906-3914, 1996
234 1996 Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n -type silicon P Pellegrino, P Lévêque, J Lalita, A Hallén, C Jagadish, BG Svensson
Physical Review B 64 (19), 195211, 2001
128 2001 Helium bubble distributions in a nanostructured ferritic alloy PD Edmondson, CM Parish, Y Zhang, A Hallén, MK Miller
Journal of Nuclear Materials 434 (1-3), 210-216, 2013
127 2013 Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon BG Svensson, C Jagadish, A Hallén, J Lalita
Physical Review B 55 (16), 10498, 1997
122 1997 Pseudodonor nature of the L Storasta, FHC Carlsson, SG Sridhara, JP Bergman, A Henry, T Egilsson, ...
Applied Physics Letters 78 (1), 46-48, 2001
115 2001 Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC Y Zhang, WJ Weber, W Jiang, CM Wang, V Shutthanandan, A Hallen
Journal of applied physics 95 (8), 4012-4018, 2004
113 2004 Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis Y Zhang, WJ Weber, W Jiang, A Hallén, G Possnert
Journal of applied physics 91 (10), 6388-6395, 2002
108 2002 Bandgap widening in thermochromic Mg-doped VO2 thin films: Quantitative data based on optical absorption SY Li, NR Mlyuka, D Primetzhofer, A Hallén, G Possnert, GA Niklasson, ...
Applied physics letters 103 (16), 2013
106 2013 Helium entrapment in a nanostructured ferritic alloy PD Edmondson, CM Parish, Y Zhang, A Hallén, MK Miller
Scripta Materialia 65 (8), 731-734, 2011
100 2011 Electrically active defects in irradiated 4H-SiC ML David, G Alfieri, EM Monakhov, A Hallén, C Blanchard, BG Svensson, ...
Journal of applied physics 95 (9), 4728-4733, 2004
100 2004 Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers D Åberg, A Hallén, P Pellegrino, BG Svensson
Applied Physics Letters 78 (19), 2908-2910, 2001
95 * 2001 Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si EV Monakhov, BS Avset, A Hallén, BG Svensson
Physical Review B 65 (23), 233207, 2002
90 2002 Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures HM Ayedh, R Nipoti, A Hallén, BG Svensson
Applied Physics Letters 107 (25), 2015
87 2015 New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector MK Linnarsson, A Hallén, J Åström, D Primetzhofer, S Legendre, ...
Review of Scientific Instruments 83 (9), 2012
87 2012 Formation of carbon vacancy in 4H silicon carbide during high-temperature processing HM Ayedh, V Bobal, R Nipoti, A Hallén, BG Svensson
Journal of Applied Physics 115 (1), 2014
80 2014 Ion implantation of silicon carbide A Hallén, MS Janson, AY Kuznetsov, D Åberg, MK Linnarsson, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
79 2002 Deep level transient spectroscopy analysis of fast ion tracks in silicon A Hallén, BUR Sundqvist, Z Paska, BG Svensson, M Rosling, J Tirén
Journal of applied physics 67 (3), 1266-1271, 1990
76 1990 The influence of ion flux on defect production in MeV proton‐irradiated silicon A Hallén, D Fenyö, BUR Sundqvist, RE Johnson, BG Svensson
Journal of applied physics 70 (6), 3025-3030, 1991
72 1991 Radiation damage features on mica and L-valine probed by scanning force microscopy DDNB Daya, A Hallén, J Eriksson, J Kopniczky, R Papaléo, CT Reimann, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
70 1995 