| Thin film transistor including low resistance conductive thin films and manufacturing method thereof M Furuta, T Hirao, H Furuta, T Matsuda, T Hiramatsu, H Ishii, H Hokari, ... US Patent 7,576,394, 2009 | 3826 | 2009 |
| Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof T Hirao, M Furuta, H Furuta, T Matsuda, T Hiramatsu US Patent 7,977,169, 2011 | 3798 | 2011 |
| Novel top‐gate zinc oxide thin‐film transistors (ZnO TFTs) for AMLCDs T Hirao, M Furuta, H Furuta, T Matsuda, T Hiramatsu, H Hokari, M Yoshida, ... Journal of the Society for Information Display 15 (1), 17-22, 2007 | 761 | 2007 |
| Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof T Hirao, T Hiramatsu, M Furuta, H Furuta, T Matsuda US Patent 7,598,520, 2009 | 281 | 2009 |
| Bottom-gate zinc oxide thin-film transistors (ZnO TFTs) for AM-LCDs T Hirao, M Furuta, T Hiramatsu, T Matsuda, C Li, H Furuta, H Hokari, ... IEEE Transactions on Electron Devices 55 (11), 3136-3142, 2008 | 275 | 2008 |
| Manufacturing method of semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing T Hirao, T Hiramatsu, M Furuta, H Furuta, T Matsuda US Patent 7,993,964, 2011 | 237 | 2011 |
| Manufacturing method of thin film transistor including low resistance conductive thin films M Furuta, T Hirao, H Furuta, T Matsuda, T Hiramatsu, H Ishii, H Hokari, ... US Patent 7,981,734, 2011 | 167 | 2011 |
| Stacked image sensor with green-and red-sensitive organic photoconductive films applying zinc oxide thin-film transistors to a signal readout circuit S Aihara, H Seo, M Namba, T Watabe, H Ohtake, M Kubota, N Egami, ... IEEE Transactions on Electron Devices 56 (11), 2570-2576, 2009 | 129 | 2009 |
| Effects of substrate on the structural, electrical and optical properties of Al-doped ZnO films prepared by radio frequency magnetron sputtering C Li, M Furuta, T Matsuda, T Hiramatsu, H Furuta, T Hirao Thin Solid Films 517 (11), 3265-3268, 2009 | 104 | 2009 |
| Rare-metal-free high-performance Ga-Sn-O thin film transistor Tokiyoshi Matsuda, Kenta Umeda, Yuta Kato, Daiki Nishimoto, Mutsumi Kimura Scientific Reports 7, 44326, 2017 | 93 | 2017 |
| Analysis of hump characteristics in thin-film transistors with ZnO channels deposited by sputtering at various oxygen partial pressures M Furuta, Y Kamada, M Kimura, T Hiramatsu, T Matsuda, H Furuta, C Li, ... IEEE electron device letters 31 (11), 1257-1259, 2010 | 75 | 2010 |
| A 128× 96 pixel stack-type color image sensor: stack of individual blue-, green-, and red-sensitive organic photoconductive films integrated with a ZnO thin film transistor … H Seo, S Aihara, T Watabe, H Ohtake, T Sakai, M Kubota, N Egami, ... Japanese Journal of Applied Physics 50 (2R), 024103, 2011 | 70 | 2011 |
| 4.1: Distinguished Paper: High Mobility Top‐Gate Zinc Oxide Thin‐Film Transistors (ZnO‐TFTs) for Active‐Matrix Liquid Crystal Displays T Hirao, M Furuta, H Furuta, T Matsuda, T Hiramatsu, H Hokari, M Yoshida SID Symposium Digest of Technical Papers 37 (1), 18-20, 2006 | 61 | 2006 |
| Influence of thermal annealing on microstructures of zinc oxide films deposited by RF magnetron sputtering T Hiramatsu, M Furuta, H Furuta, T Matsuda, T Hirao Japanese Journal of Applied Physics 46 (6R), 3319, 2007 | 57 | 2007 |
| Oxygen bombardment effects on average crystallite size of sputter-deposited ZnO films M Furuta, T Hiramatsu, T Matsuda, C Li, H Furuta, T Hirao Journal of non-crystalline solids 354 (17), 1926-1931, 2008 | 40 | 2008 |
| Influence of amorphous buffer layers on the crystallinity of sputter-deposited undoped ZnO films T Matsuda, M Furuta, T Hiramatsu, C Li, H Furuta, H Hokari, T Hirao Journal of crystal growth 310 (1), 31-35, 2008 | 38 | 2008 |
| Cellular neural network formed by simplified processing elements composed of thin-film transistors M Kimura, R Morita, S Sugisaki, T Matsuda, T Kameda, Y Nakashima Neurocomputing 248, 112-119, 2017 | 33 | 2017 |
| Extraction of trap densities in ZnO thin-film transistors and dependence on oxygen partial pressure during sputtering of ZnO films M Kimura, M Furuta, Y Kamada, T Hiramatsu, T Matsuda, H Furuta, C Li, ... IEEE transactions on electron devices 58 (9), 3018-3024, 2011 | 30 | 2011 |
| Effect of surface treatment of gate-insulator on uniformity of bottom-gate ZnO thin film transistors M Furuta, T Nakanishi, M Kimura, T Hiramatsu, T Matsuda, H Furuta, ... Electrochemical and Solid-State Letters 13 (4), H101, 2010 | 29 | 2010 |
| ESR study of Gd3+ and Mn2+ ions sorbed on hydroxyapatite T Matsuda, C Yamanaka, M Ikeya Applied Radiation and Isotopes 62 (2), 353-357, 2005 | 28 | 2005 |
