Artikel dengan mandat akses publik - Frank EllingerPelajari lebih lanjut
Tidak tersedia di mana pun: 289
A low-power SiGe BiCMOS 190-GHz transceiver chipset with demonstrated data rates up to 50 Gbit/s using on-chip antennas
D Fritsche, P Stärke, C Carta, F Ellinger
IEEE Transactions on Microwave Theory and Techniques 65 (9), 3312-3323, 2017
Mandat: German Research Foundation
Millimeter-wave low-noise amplifier design in 28-nm low-power digital CMOS
D Fritsche, G Tretter, C Carta, F Ellinger
IEEE Transactions on Microwave Theory and Techniques 63 (6), 1910-1922, 2015
Mandat: German Research Foundation
170 GHz SiGe-BiCMOS loss-compensated distributed amplifier
PV Testa, G Belfiore, R Paulo, C Carta, F Ellinger
IEEE Journal of Solid-State Circuits 50 (10), 2228-2238, 2015
Mandat: German Research Foundation
Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm
N Münzenrieder, L Petti, C Zysset, GA Salvatore, T Kinkeldei, C Perumal, ...
2012 International Electron Devices Meeting, 5.2. 1-5.2. 4, 2012
Mandat: Swiss National Science Foundation
Review of recent trends in flexible metal oxide thin-film transistors for analog applications
G Cantarella, J Costa, T Meister, K Ishida, C Carta, F Ellinger, P Lugli, ...
Flexible and Printed Electronics 5 (3), 033001, 2020
Mandat: German Research Foundation
A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 m SiGe BiCMOS
D Fritsche, C Carta, F Ellinger
IEEE Microwave and Wireless Components Letters 24 (11), 790-792, 2014
Mandat: German Research Foundation
A 50 Gb/s 190 mW asymmetric 3-tap FFE VCSEL driver
G Belfiore, M Khafaji, R Henker, F Ellinger
IEEE Journal of Solid-State Circuits 52 (9), 2422-2429, 2017
Mandat: German Research Foundation
A 53-Gbit/s optical receiver frontend with 0.65 pJ/bit in 28-nm bulk-CMOS
L Szilagyi, J Pliva, R Henker, D Schoeniger, JP Turkiewicz, F Ellinger
IEEE Journal of Solid-State Circuits 54 (3), 845-855, 2018
Mandat: German Research Foundation
Design and characterization of a 3-bit 24-GS/s flash ADC in 28-nm low-power digital CMOS
G Tretter, MM Khafaji, D Fritsche, C Carta, F Ellinger
IEEE Transactions on Microwave Theory and Techniques 64 (4), 1143-1152, 2016
Mandat: German Research Foundation
Advanced organic permeable‐base transistor with superior performance
MP Klinger, A Fischer, F Kaschura, R Scholz, B Lüssem, ...
Advanced Materials 27 (47), 7734-7739, 2015
Mandat: German Research Foundation
A trimmable cascaded distributed amplifier with 1.6 THz gain-bandwidth product
D Fritsche, G Tretter, C Carta, F Ellinger
IEEE Transactions on Terahertz Science and Technology 5 (6), 1094-1096, 2015
Mandat: German Research Foundation
A 160–190-GHz vector-modulator phase shifter for low-power applications
PV Testa, C Carta, F Ellinger
IEEE Microwave and Wireless Components Letters 30 (1), 86-89, 2019
Mandat: German Research Foundation
A 210-GHz SiGe balanced amplifier for ultrawideband and low-voltage applications
PV Testa, C Carta, B Klein, R Hahnel, D Plettemeier, F Ellinger
IEEE Microwave and Wireless Components Letters 27 (3), 287-289, 2017
Mandat: German Research Foundation
A 140–210 GHz low-power vector-modulator phase shifter in 130nm SiGe BiCMOS technology
PV Testa, C Carta, F Ellinger
2018 Asia-Pacific Microwave Conference (APMC), 530-532, 2018
Mandat: German Research Foundation
Analysis and design of a 30-to 220-GHz balanced cascaded single-stage distributed amplifier in 130-nm SiGe BiCMOS
PV Testa, C Carta, U Jörges, F Ellinger
IEEE Journal of Solid-State Circuits 53 (5), 1457-1467, 2018
Mandat: German Research Foundation, Federal Ministry of Education and Research, Germany
Fully printed flexible audio system on the basis of low‐voltage polymeric organic field effect transistors with three layer dielectric
GC Schmidt, D Höft, K Haase, M Bellmann, B Kheradmand‐Boroujeni, ...
Journal of Polymer Science Part B: Polymer Physics 53 (20), 1409-1415, 2015
Mandat: German Research Foundation
High-efficiency wideband 3-D on-chip antennas for subterahertz applications demonstrated at 200 GHz
P Stärke, D Fritsche, S Schumann, C Carta, F Ellinger
IEEE Transactions on Terahertz Science and Technology 7 (4), 415-423, 2017
Mandat: German Research Foundation
250 GHz SiGe-BiCMOS cascaded single-stage distributed amplifier
PV Testa, R Paulo, C Carta, F Ellinger
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2015
Mandat: German Research Foundation
A low-power SiGe BiCMOS 190-GHz receiver with 47-dB conversion gain and 11-dB noise figure for ultralarge-bandwidth applications
D Fritsche, G Tretter, P Stärke, C Carta, F Ellinger
IEEE Transactions on Microwave Theory and Techniques 65 (10), 4002-4013, 2017
Mandat: German Research Foundation
A Low-Power Broadband 200 GHz Down-Conversion Mixer with Integrated LO-Driver in 0.13m SiGe BiCMOS
D Fritsche, JD Leufker, G Tretter, C Carta, F Ellinger
IEEE Microwave and Wireless Components Letters 25 (9), 594-596, 2015
Mandat: German Research Foundation
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