David Gundlach

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Thomas N. JacksonRobert E. Kirby Chair Professor of Electrical Engineering, Penn State UniversityEmail yang diverifikasi di psu.edu
Curt A RichterLeader, Quantum Transport Project, National Institute of Standards and TechnologyEmail yang diverifikasi di nist.gov
Lee J RichterNational Institute of Standards and TechnologyEmail yang diverifikasi di nist.gov
R. Joseph KlineNational Institute of Standards and TechnologyEmail yang diverifikasi di nist.gov
Oana D. JurchescuBaker Professor of Physics, Wake Forest UniversityEmail yang diverifikasi di wfu.edu
Behrang H. HamadaniNational Institute of Standards and TechnologyEmail yang diverifikasi di nist.gov
Kurt P. PernstichZurich University of Applied SciencesEmail yang diverifikasi di zhaw.ch
John AnthonyC.W. Hammond Professor of Chemistry, University of KentuckyEmail yang diverifikasi di uky.edu
Emily G. BittleNational Institute of Standards and TechnologyEmail yang diverifikasi di nist.gov
Iain McCullochUniversity of OxfordEmail yang diverifikasi di chem.ox.ac.uk
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicEmail yang diverifikasi di rpi.edu
Martin HeeneyKAUST, Imperial College LondonEmail yang diverifikasi di imperial.ac.uk
Angela R. Hight WalkerNational Institute of Standards and TechnologyEmail yang diverifikasi di nist.gov
Huili Grace XingProf. of ECE & MSE, Cornell UniversityEmail yang diverifikasi di cornell.edu
Prof. Dr. Cornelius KrellnerGoethe Universität Frankfurt am MainEmail yang diverifikasi di physik.uni-frankfurt.de
Christina HackerNational Institute of Standards and TechnologyEmail yang diverifikasi di nist.gov
Darrell G. SchlomCornell UniversityEmail yang diverifikasi di cornell.edu
Ian G HillProfessor, Dalhousie University, Department of Physics and Atmospheric ScienceEmail yang diverifikasi di dal.ca
Sean ParkinDirector of Crystallography, University of KentuckyEmail yang diverifikasi di uky.edu
Brad Richard ConradEducation and Workforce Development ManagerEmail yang diverifikasi di nist.gov

Ikuti

David Gundlach

National Institute of Standards and Technology

Email yang diverifikasi di nist.gov - Beranda

electronic devices excitonic/polaronic systems room temperature coherent properties


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Stacked pentacene layer organic thin-film transistors with improved characteristics YY Lin, DJ Gundlach, SF Nelson, TN Jackson IEEE Electron Device Letters 18 (12), 606-608, 1997	1292	1997
Pentacene organic thin-film transistors-molecular ordering and mobility DJ Gundlach, YY Lin, TN Jackson, SF Nelson, DG Schlom IEEE Electron Device Letters 18 (3), 87-89, 1997	1094	1997
Temperature-independent transport in high-mobility pentacene transistors SF Nelson, YY Lin, DJ Gundlach, TN Jackson Applied physics letters 72 (15), 1854-1856, 1998	1079	1998
Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates CD Sheraw, L Zhou, JR Huang, DJ Gundlach, TN Jackson, MG Kane, ... Applied physics letters 80 (6), 1088-1090, 2002	1009	2002
Pentacene-based organic thin-film transistors YY Lin, DI Gundlach, SF Nelson, TN Jackson IEEE Transactions on Electron Devices 44 (8), 1325-1331, 1997	753	1997
Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator KP Pernstich, S Haas, D Oberhoff, C Goldmann, DJ Gundlach, B Batlogg, ... Journal of Applied Physics 96 (11), 6431-6438, 2004	648	2004
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	572	2006
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits DJ Gundlach, JE Royer, SK Park, S Subramanian, OD Jurchescu, ... Nature Materials 7 (3), 216-221, 2008	552	2008
Mobility overestimation due to gated contacts in organic field-effect transistors EG Bittle, JI Basham, TN Jackson, OD Jurchescu, DJ Gundlach Nature communications 7 (1), 10908, 2016	532	2016
Semiconducting thienothiophene copolymers: design, synthesis, morphology, and performance in thin‐film organic transistors I McCulloch, M Heeney, ML Chabinyc, D DeLongchamp, RJ Kline, ... Advanced Materials 21 (10‐11), 1091-1109, 2009	493	2009
Contact resistance extraction in pentacene thin film transistors PV Necliudov, MS Shur, DJ Gundlach, TN Jackson Solid-State Electronics 47 (2), 259-262, 2003	431	2003
Pentacene organic thin-film transistors for circuit and display applications H Klauk, DJ Gundlach, JA Nichols, TN Jackson IEEE Transactions on Electron Devices 46 (6), 1258-1263, 1999	423	1999
Modeling of organic thin film transistors of different designs PV Necliudov, MS Shur, DJ Gundlach, TN Jackson Journal of applied Physics 88 (11), 6594-6597, 2000	397	2000
Anisotropic structure and charge transport in highly strain‐aligned regioregular poly (3‐hexylthiophene) B O'Connor, RJ Kline, BR Conrad, LJ Richter, D Gundlach, MF Toney, ... Advanced Functional Materials 21 (19), 3697-3705, 2011	367	2011
Solvent-induced phase transition in thermally evaporated pentacene films DJ Gundlach, TN Jackson, DG Schlom, SF Nelson Applied Physics Letters 74 (22), 3302-3304, 1999	342	1999
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ... Nano letters 12 (9), 4518-4522, 2012	315	2012
A flexible solution-processed memristor N Gergel-Hackett, B Hamadani, B Dunlap, J Suehle, C Richter, C Hacker, ... IEEE Electron Device Letters 30 (7), 706-708, 2009	306	2009
Hole mobility in organic single crystals measured by a “flip-crystal” field-effect technique C Goldmann, S Haas, C Krellner, KP Pernstich, DJ Gundlach, B Batlogg Journal of Applied Physics 96 (4), 2080-2086, 2004	305	2004
Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes DJ Gundlach, LL Jia, TN Jackson IEEE Electron Device Letters 22 (12), 571-573, 2001	297	2001
Undoped polythiophene field-effect transistors with mobility of 1cm2V− 1s− 1 BH Hamadani, DJ Gundlach, I McCulloch, M Heeney Applied Physics Letters 91 (24), 2007	295	2007

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