Sriram Krishnamoorthy

Dikutip oleh

	Semua	Sejak 2020
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Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityEmail yang diverifikasi di ece.osu.edu
Arkka BhattacharyyaUniversity of California Santa BarbaraEmail yang diverifikasi di ucsb.edu
Praneeth RangaUniversity of UtahEmail yang diverifikasi di utah.edu
Fatih AkyolYıldız Teknik ÜniversitesiEmail yang diverifikasi di yildiz.edu.tr
Digbijoy NathAssociate Professor at Indian Institute of ScienceEmail yang diverifikasi di iisc.ac.in
Yuewei ZhangUCSBEmail yang diverifikasi di ucsb.edu
PIL SUNG PARKTechnology Development Center, Samsung ElectronicsEmail yang diverifikasi di osu.edu
Carl PetersonGraduate Student, University of California Santa BarbaraEmail yang diverifikasi di ucsb.edu
Michael A. (Mike) ScarpullaProfessor, MSE & ECE, University of UtahEmail yang diverifikasi di utah.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Sanyam BajajIntel CorporationEmail yang diverifikasi di intel.com
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityEmail yang diverifikasi di osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Michael MoseleySandia National LaboratoriesEmail yang diverifikasi di sandia.gov
Yiying Wuprofessor of chemistry, ohio state universityEmail yang diverifikasi di osu.edu
Steven RingelThe Ohio State UniversityEmail yang diverifikasi di osu.edu
Jacob B KhurginJohns Hopkins UniversityEmail yang diverifikasi di jhu.edu
Lu MaBrookhaven National LabEmail yang diverifikasi di bnl.gov
Edwin W. Lee IIPhD, The Ohio State UniversityEmail yang diverifikasi di osu.edu
William McCullochChemistry Graduate Student, The Ohio State UniversityEmail yang diverifikasi di osu.edu

Ikuti

Sriram Krishnamoorthy

University of California, Santa Barbara

Email yang diverifikasi di ucsb.edu - Beranda

Semiconductors Gallium Oxide Gallium Nitride MBE MOCVD


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022	365	2022
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	333	2017
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 2017	280	2017
Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013	271	2013
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011	208	2011
Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97, 203502, 2010	199	2010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012	186	2012
Delta-doped β-gallium oxide field-effect transistor S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan Applied Physics Express 10 (5), 051102, 2017	178	2017
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018	168	2018
Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018	164	2018
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571, 2018	163	2018
Low resistance GaN/InGaN/GaN tunnel junctions S Krishnamoorthy, F Akyol, PS Park, S Rajan Applied Physics Letters 102 (11), 2013	162	2013
High-k Oxide Field-Plated Vertical (001) β-Ga₂O₃ Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm² S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy IEEE Electron Device Letters 42 (8), 1140-1143, 2021	149	2021
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ... Applied Physics Letters 102 (7), 2013	111	2013
Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan Electron Device Letters, IEEE 35 (3), 312-314, 2014	108	2014
AlGaN channel field effect transistors with graded heterostructure ohmic contacts S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan Applied Physics Letters 109 (13), 2016	105	2016
Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015	103	2015
Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017	99	2017
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ... Applied Physics Letters 107 (15), 2015	99	2015
Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop F Akyol, S Krishnamoorthy, S Rajan Applied Physics Letters 103 (8), 2013	97	2013

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