Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors W Knap, J Lusakowski, T Parenty, S Bollaert, A Cappy, VV Popov, ... Applied Physics Letters 84 (13), 2331-2333, 2004 | 449 | 2004 |
Resonant and voltage-tunable terahertz detection in InGaAs∕ InP nanometer transistors A El Fatimy, F Teppe, N Dyakonova, W Knap, D Seliuta, G Valušis, ... Applied physics letters 89 (13), 2006 | 270 | 2006 |
Room-temperature terahertz emission from nanometer field-effect transistors N Dyakonova, A El Fatimy, J Łusakowski, W Knap, MI Dyakonov, ... Applied physics letters 88 (14), 2006 | 196 | 2006 |
Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕ InAlAs transistor J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ... Journal of applied physics 97 (6), 2005 | 183 | 2005 |
Microscopic modeling of nonlinear transport in ballistic nanodevices J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ... IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003 | 105 | 2003 |
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ... Nanotechnology 14 (2), 117, 2003 | 105 | 2003 |
Imaging and controlling electron transport inside a quantum ring B Hackens, F Martins, T Ouisse, H Sellier, S Bollaert, X Wallart, A Cappy, ... Nature Physics 2 (12), 826-830, 2006 | 102 | 2006 |
Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors N Dyakonova, F Teppe, J Łusakowski, W Knap, M Levinshtein, ... Journal of Applied Physics 97 (11), 2005 | 100 | 2005 |
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors F Teppe, M Orlov, A El Fatimy, A Tiberj, W Knap, J Torres, V Gavrilenko, ... Applied Physics Letters 89 (22), 2006 | 95 | 2006 |
Imaging electron wave functions inside open quantum rings F Martins, B Hackens, MG Pala, T Ouisse, H Sellier, X Wallart, S Bollaert, ... Physical review letters 99 (13), 136807, 2007 | 94 | 2007 |
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ... IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007 | 89 | 2007 |
Current driven resonant plasma wave detection of terahertz radiation: Toward the Dyakonov–Shur instability S Boubanga-Tombet, F Teppe, D Coquillat, S Nadar, N Dyakonova, ... Applied Physics Letters 92 (21), 2008 | 79 | 2008 |
Metamorphic In_< 0.4> Al_< 0.6> As/In_< 0.4> Ga_< 0.6> As HEMTs on GaAs substrate S Bollaert IEEE Electron Device Lett. 20, 123-125, 1999 | 73 | 1999 |
Oblique modes effect on terahertz plasma wave resonant detection in InGaAs∕ InAlAs multichannel transistors A Shchepetov, C Gardès, Y Roelens, A Cappy, S Bollaert, ... Applied Physics Letters 92 (24), 2008 | 68 | 2008 |
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ... Semiconductor science and technology 22 (6), 663, 2007 | 67 | 2007 |
Nonlinear effects in T-branch junctions J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ... IEEE Electron Device Letters 25 (5), 235-237, 2004 | 65 | 2004 |
Dwell-time-limited coherence in open quantum dots B Hackens, S Faniel, C Gustin, X Wallart, S Bollaert, A Cappy, V Bayot Physical review letters 94 (14), 146802, 2005 | 62 | 2005 |
The indium content in metamorphic InxAl1− xAs/InxGa1− xAs HEMTs on GaAs substrate: a new structure parameter S Bollaert, Y Cordier, M Zaknoune, H Happy, V Hoel, S Lepilliet, D Théron, ... Solid-State Electronics 44 (6), 1021-1027, 2000 | 59 | 2000 |
InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: influence of indium content on material properties and device performance Y Cordier, S Bollaert, M Zaknoune, J Dipersio, D Ferre Japanese journal of applied physics 38 (2S), 1164, 1999 | 52 | 1999 |
InAlAs-InGaAs double-gate HEMTs on transferred substrate N Wichmann, I Duszynski, X Wallart, S Bollaert, A Cappy IEEE Electron Device Letters 25 (6), 354-356, 2004 | 51 | 2004 |