Artikel dengan mandat akses publik - A. G. TaboadaPelajari lebih lanjut
Tidak tersedia di mana pun: 6
Three dimensional atom probe imaging of GaAsSb quantum rings
AM Beltrán, EA Marquis, AG Taboada, JM Ripalda, JM García, SI Molina
Ultramicroscopy 111 (8), 1073-1076, 2011
Mandat: Government of Spain
Site-Controlled natural GaAs (111) quantum dots fabricated on vertical GaAs/Ge microcrystals on deeply patterned Si (001) substrates
F Biccari, L Esposito, C Mannucci, AG Taboada, S Bietti, A Ballabio, ...
Nanoscience and Nanotechnology Letters 9 (7), 1108-1113, 2017
Mandat: Government of Italy
Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots
AM Beltran, T Ben, DL Sales, AM Sanchez, JM Ripalda, AG Taboada, ...
Advanced Science Letters 4 (11-12), 3776-3778, 2011
Mandat: Government of Spain
Oscillatory persistent currents in nano‐volcanoes
N Kleemans, IMA Bominaar‐Silkens, VM Fomin, VN Gladilin, D Granados, ...
AIP Conference Proceedings 893 (1), 683-684, 2007
Mandat: Research Foundation (Flanders)
Fabrication and characterization of near thresholdless lasers at room temperature
I Prieto, JM Llorens, LE Muñoz-Camúñez, C Robles, AG Taboada, ...
Active Photonic Materials VII 9546, 34-39, 2015
Mandat: Government of Spain
Microcavity‐Mediated Coupling of Two Distant InAs/GaAs Quantum Dots
E Gallardo, LJ Martínez, AK Nowak, HP der Meulen, JM Calleja, ...
AIP Conference Proceedings 1399 (1), 969-970, 2011
Mandat: Government of Spain
Tersedia di suatu tempat: 18
Oscillatory persistent currents in self-assembled quantum rings
N Kleemans, IMA Bominaar-Silkens, VM Fomin, VN Gladilin, D Granados, ...
Physical review letters 99 (14), 146808, 2007
Mandat: Research Foundation (Flanders)
Near thresholdless laser operation at room temperature
I Prieto, JM Llorens, LE Munoz-Camúnez, AG Taboada, J Canet-Ferrer, ...
Optica 2 (1), 66-69, 2015
Mandat: Government of Spain
Different strategies towards the deterministic coupling of a single quantum dot to a photonic crystal cavity mode
I Prieto, J Herranz, Y González, J Canet-Ferrer, L Wewior, PA Postigo, ...
2011 13th International Conference on Transparent Optical Networks, 1-5, 2011
Mandat: Government of Spain
Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields
N Kleemans, JH Blokland, AG Taboada, HCM Van Genuchten, M Bozkurt, ...
Physical Review B—Condensed Matter and Materials Physics 80 (15), 155318, 2009
Mandat: Research Foundation (Flanders)
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
AG Taboada, M Meduňa, M Salvalaglio, F Isa, T Kreiliger, CV Falub, ...
Journal of Applied Physics 119 (5), 2016
Mandat: Swiss National Science Foundation
Strain relaxation of GaAs/Ge crystals on patterned Si substrates
AG Taboada, T Kreiliger, CV Falub, F Isa, M Salvalaglio, L Wewior, ...
Applied Physics Letters 104 (2), 2014
Mandat: Government of Spain
3D heteroepitaxy of mismatched semiconductors on silicon
CV Falub, T Kreiliger, F Isa, AG Taboada, M Meduňa, F Pezzoli, ...
Thin Solid Films 557, 42-49, 2014
Mandat: Government of Italy
Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching
IP González, LE Muñoz Camuñez, AG Taboada, C Robles Urdiales, ...
Journal of Vacuum Science & Technology B 32 (1), 2014
Mandat: Government of Spain
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates
H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ...
ECS Transactions 64 (6), 631, 2014
Mandat: Swiss National Science Foundation
Strain driven migration of In during the growth of InAs/GaAs quantum posts
D Alonso-Álvarez, B Alén, JM Ripalda, A Rivera, AG Taboada, JM Llorens, ...
APL Materials 1 (2), 2013
Mandat: Government of Spain
Relaxation dynamics and residual strain in metamorphic AlSb on GaAs
JM Ripalda, AM Sánchez, AG Taboada, A Rivera, B Alén, Y González, ...
Applied Physics Letters 100 (1), 2012
Mandat: Government of Spain
Effect of Sb incorporation on the electronic structure of InAs quantum dots
AG Taboada, JM Llorens, D Alonso-Álvarez, B Alén, A Rivera, Y González, ...
Physical Review B—Condensed Matter and Materials Physics 88 (8), 085308, 2013
Mandat: Government of Spain
Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates
A Jung, AG Taboada, W Stumpf, T Kreiliger, F Isa, G Isella, ...
Journal of Applied Physics 118 (7), 2015
Mandat: Swiss National Science Foundation
Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
AM Beltran, T Ben, AM Sánchez, JM Ripalda, AG Taboada, SI Molina
Materials Letters 65 (11), 1608-1610, 2011
Mandat: Government of Spain
Informasi terbitan dan pendanaan ditentukan secara otomatis oleh program komputer