| Oscillatory persistent currents in self-assembled quantum rings N Kleemans, IMA Bominaar-Silkens, VM Fomin, VN Gladilin, D Granados, ... Physical review letters 99 (14), 146808, 2007 | 261 | 2007 |
| Near thresholdless laser operation at room temperature I Prieto, JM Llorens, LE Munoz-Camúnez, AG Taboada, J Canet-Ferrer, ... Optica 2 (1), 66-69, 2015 | 67 | 2015 |
| Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si (001) Films and Their Elimination by Deep Substrate Patterning A Marzegalli, F Isa, H Groiss, E Müller, CV Falub, AG Taboada, ... Advanced Materials 25 (32), 4408-4412, 2013 | 65 | 2013 |
| Optical coupling of two distant InAs/GaAs quantum dots by a photonic-crystal microcavity E Gallardo, LJ Martínez, AK Nowak, D Sarkar, HP Van der Meulen, ... Physical Review B—Condensed Matter and Materials Physics 81 (19), 193301, 2010 | 63 | 2010 |
| Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells D Alonso-Álvarez, AG Taboada, JM Ripalda, B Alén, Y González, ... Applied Physics Letters 93 (12), 2008 | 61 | 2008 |
| Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping JM Ripalda, D Alonso-Álvarez, B Alén, AG Taboada, JM García, ... Applied Physics Letters 91 (1), 2007 | 49 | 2007 |
| Perfect crystals grown from imperfect interfaces CV Falub, M Meduňa, D Chrastina, F Isa, A Marzegalli, T Kreiliger, ... Scientific reports 3 (1), 2276, 2013 | 42 | 2013 |
| Different strategies towards the deterministic coupling of a single quantum dot to a photonic crystal cavity mode I Prieto, J Herranz, Y González, J Canet-Ferrer, L Wewior, PA Postigo, ... 2011 13th International Conference on Transparent Optical Networks, 1-5, 2011 | 40 | 2011 |
| Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields N Kleemans, JH Blokland, AG Taboada, HCM Van Genuchten, M Bozkurt, ... Physical Review B—Condensed Matter and Materials Physics 80 (15), 155318, 2009 | 38 | 2009 |
| GaAs/Ge crystals grown on Si substrates patterned down to the micron scale AG Taboada, M Meduňa, M Salvalaglio, F Isa, T Kreiliger, CV Falub, ... Journal of Applied Physics 119 (5), 2016 | 35 | 2016 |
| High resolution electron microscopy of GaAs capped GaSb nanostructures SI Molina, AM Beltrán, T Ben, PL Galindo, E Guerrero, AG Taboada, ... Applied Physics Letters 94 (4), 2009 | 28 | 2009 |
| Strain relaxation of GaAs/Ge crystals on patterned Si substrates AG Taboada, T Kreiliger, CV Falub, F Isa, M Salvalaglio, L Wewior, ... Applied Physics Letters 104 (2), 2014 | 27 | 2014 |
| Blocking of indium incorporation by antimony in III–V-Sb nanostructures AM Sánchez, AM Beltran, R Beanland, T Ben, MH Gass, F de la Peña, ... Nanotechnology 21 (14), 145606, 2010 | 26 | 2010 |
| Emission polarization control in semiconductor quantum dots coupled to a photonic crystal microcavity E Gallardo, LJ Martínez, AK Nowak, HP Van der Meulen, JM Calleja, ... Optics express 18 (12), 13301-13308, 2010 | 25 | 2010 |
| 3D heteroepitaxy of mismatched semiconductors on silicon CV Falub, T Kreiliger, F Isa, AG Taboada, M Meduňa, F Pezzoli, ... Thin Solid Films 557, 42-49, 2014 | 22 | 2014 |
| Onset of vertical threading dislocations in Si1− xGex/Si (001) at a critical Ge concentration F Isa, A Marzegalli, AG Taboada, CV Falub, G Isella, F Montalenti, ... APL Materials 1 (5), 2013 | 21 | 2013 |
| Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching IP González, LE Muñoz Camuñez, AG Taboada, C Robles Urdiales, ... Journal of Vacuum Science & Technology B 32 (1), 2014 | 18 | 2014 |
| Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ... ECS Transactions 64 (6), 631, 2014 | 17 | 2014 |
| Three dimensional atom probe imaging of GaAsSb quantum rings AM Beltrán, EA Marquis, AG Taboada, JM Ripalda, JM García, SI Molina Ultramicroscopy 111 (8), 1073-1076, 2011 | 17 | 2011 |
| Structural and optical changes induced by incorporation of antimony into InAs/GaAs (001) quantum dots AG Taboada, AM Sánchez, AM Beltrán, M Bozkurt, D Alonso-Álvarez, ... Physical Review B—Condensed Matter and Materials Physics 82 (23), 235316, 2010 | 17 | 2010 |
Dr. Jorge M. GarcíaInstituto de Micro y Nanotecnología-CNM, CSICEmail yang diverifikasi di csic.es