Observation of magnon-mediated electric current drag at room temperature H Wu, CH Wan, X Zhang, ZH Yuan, QT Zhang, JY Qin, HX Wei, XF Han, ...
Physical Review B 93 (6), 060403, 2016
108 2016 Nanometer magnetic multilayer film for temperature sensor and manufacturing method therefor X Han, Y Zhonghui, P Liu, G Yu, J Feng, D Zhang
US Patent 9,484,527, 2016
97 2016 Spin gapless semiconductor like Ti2 MnAl film as a new candidate for spintronics application W Feng, X Fu, C Wan, Z Yuan, X Han, NV Quang, S Cho
physica status solidi (RRL)–Rapid Research Letters 9 (11), 641-645, 2015
83 2015 Programmable spin logic based on spin Hall effect in a single device C Wan, X Zhang, Z Yuan, C Fang, W Kong, Q Zhang, H Wu, U Khan, ...
Advanced Electronic Materials 3 (3), 1600282, 2017
82 2017 Scaling relation between anomalous Nernst and Hall effect in multilayers C Fang, CH Wan, ZH Yuan, L Huang, X Zhang, H Wu, QT Zhang, XF Han
Physical Review B 93 (5), 054420, 2016
72 2016 Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system WJ Kong, YR Ji, X Zhang, H Wu, QT Zhang, ZH Yuan, CH Wan, XF Han, ...
Applied Physics Letters 109 (13), 2016
71 2016 Observation of pure inverse spin Hall effect in ferromagnetic metals via ferromagnetic/antiferromagnetic exchange-bias structures H Wu, CH Wan, ZH Yuan, X Zhang, J Jiang, QT Zhang, ZC Wen, XF Han
Physical Review B 92 (5), 054404, 2015
48 2015 Electrical control over perpendicular magnetization switching driven by spin-orbit torques X Zhang, CH Wan, ZH Yuan, QT Zhang, H Wu, L Huang, WJ Kong, ...
Physical Review B 94 (17), 174434, 2016
45 2016 Noise suppression and sensitivity manipulation of magnetic tunnel junction sensors with soft magnetic Co70. 5Fe4. 5Si15B10 layer L Huang, ZH Yuan, BS Tao, CH Wan, P Guo, QT Zhang, L Yin, JF Feng, ...
Journal of Applied Physics 122 (11), 2017
39 2017 Perpendicular magnetic anisotropy in Ta| Co40Fe40B20| MgAl2O4 structures and perpendicular CoFeB| MgAl2O4| CoFeB magnetic tunnel junction BS Tao, DL Li, ZH Yuan, HF Liu, SS Ali, JF Feng, HX Wei, XF Han, Y Liu, ...
Applied Physics Letters 105 (10), 2014
26 2014 Experimental demonstration of programmable multi-functional spin logic cell based on spin Hall effect X Zhang, CH Wan, ZH Yuan, C Fang, WJ Kong, H Wu, QT Zhang, BS Tao, ...
Journal of Magnetism and Magnetic Materials 428, 401-405, 2017
25 2017 Polarization‐Mediated Thermal Stability of Metal/Oxide Heterointerface Q Zhang, L You, X Shen, C Wan, Z Yuan, X Zhang, L Huang, W Kong, ...
Advanced Materials 27 (43), 6934-6938, 2015
24 2015 Lattice solitons in optical lattice controlled by electromagnetically induced transparency W Pang, J Wu, Z Yuan, Y Liu, G Chen
Journal of the Physical Society of Japan 80 (11), 113401, 2011
22 2011 Nonlocal magnetoresistance due to Lorentz force in linear transport region in bulk silicon CH Wan, ZH Yuan, P Liu, H Wu, P Guo, DL Li, SS Ali
Applied Physics Letters 103 (26), 2013
19 2013 Spin Hall Magnetoresistance in CoFe2 O4 /Pt Films H Wu, Q Zhang, C Wan, SS Ali, Z Yuan, L You, J Wang, Y Choi, X Han
IEEE Transactions on Magnetics 51 (11), 1-4, 2015
16 2015 Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers ZH Yuan, L Huang, JF Feng, ZC Wen, DL Li, XF Han, T Nakano, T Yu, ...
Journal of Applied Physics 118 (5), 2015
15 2015 Low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70. 5Fe4. 5Si15B10 composite free layer ZH Yuan, JF Feng, P Guo, CH Wan, HX Wei, SS Ali, XF Han, T Nakano, ...
Journal of Magnetism and Magnetic Materials 398, 215-219, 2016
14 2016 Magneto-Seebeck effect in spin valves XM Zhang, CH Wan, H Wu, P Tang, ZH Yuan, QT Zhang, X Zhang, ...
Journal of Applied Physics 122 (14), 2017
7 2017 Low frequency noise peak near magnon emission energy in magnetic tunnel junctions L Liu, L Xiang, H Guo, J Wei, DL Li, ZH Yuan, JF Feng, XF Han, ...
AIP Advances 4 (12), 2014
6 2014 Spin seebeck and spin-dependent seebeck effect in ferromagnetic thin films H Wu, C Fang, Z Yuan, XF Han, CH Wan
2016 IEEE International Nanoelectronics Conference (INEC), 1-2, 2016
3 2016