Siddharth Rajan

Dikutip oleh

	Semua	Sejak 2020
Kutipan	18167	10824
indeks-h	73	53
indeks-i10	199	161

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2006200720082009201020112012201320142015201620172018201920202021202220232024202596 87 146 152 222 213 269 500 600 711 829 822 1051 1541 1813 1995 2289 2155 2126 445

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108 artikel

24 artikel

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Sriram KrishnamoorthyUniversity of California, Santa BarbaraEmail yang diverifikasi di ucsb.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Umesh MishraUCSBEmail yang diverifikasi di ece.ucsb.edu
Digbijoy NathAssociate Professor at Indian Institute of ScienceEmail yang diverifikasi di iisc.ac.in
Yuewei ZhangUCSBEmail yang diverifikasi di ucsb.edu
Chandan JoishiResearch Scientist, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Jim SpeckProfessor of Materials, UCSBEmail yang diverifikasi di ucsb.edu
Fatih AkyolYıldız Teknik ÜniversitesiEmail yang diverifikasi di yildiz.edu.tr
Sanyam BajajIntel CorporationEmail yang diverifikasi di intel.com
PIL SUNG PARKTechnology Development Center, Samsung ElectronicsEmail yang diverifikasi di osu.edu
Steven RingelThe Ohio State UniversityEmail yang diverifikasi di osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityEmail yang diverifikasi di osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityEmail yang diverifikasi di osu.edu
Stacia KellerUniversity of California Santa BarbaraEmail yang diverifikasi di ece.ucsb.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraEmail yang diverifikasi di engineering.ucsb.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityEmail yang diverifikasi di asu.edu
Joe McGloneResearch Scientist, ECE and IMR at Ohio State UniversityEmail yang diverifikasi di osu.edu
Wu Lu, ProfessorThe Ohio State UniversityEmail yang diverifikasi di osu.edu
Shahadat Hasan SohelIntelEmail yang diverifikasi di intel.com
Roberto C. MyersProfessor of Materials Science, Electrical Engineering, and Physics, The Ohio State UniversityEmail yang diverifikasi di osu.edu

Ikuti

Siddharth Rajan

Electrical and Computer Engineering, Ohio State University

Email yang diverifikasi di ece.osu.edu - Beranda

semiconductors semiconductor devices


Judul Urutkan menurut kutipan Urutkan menurut tahun Urutkan menurut judul	Dikutip oleh Dikutip oleh	Tahun
Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018	1447	2018
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ... Nano letters 18 (5), 3125-3131, 2018	765	2018
High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005	623	2005
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	482	2020
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	412	2018
p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 2014	367	2014
β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022	365	2022
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	333	2017
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ... Applied Physics Letters 99 (23), 2011	316	2011
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 2007	298	2007
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 2017	280	2017
Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013	271	2013
Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018	263	2018
Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005	261	2005
N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013	258	2013
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004	238	2004
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011	208	2011
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems M Su, C Chen, S Rajan Semiconductor Science and Technology 28 (7), 074012, 2013	202	2013
Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010	199	2010
Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan Applied physics letters 112 (23), 2018	188	2018

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