Artikel dengan mandat akses publik - Aman HaquePelajari lebih lanjut
Tidak tersedia di mana pun: 6
Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides
K Zhang, B Jariwala, J Li, NC Briggs, B Wang, D Ruzmetov, RA Burke, ...
Nanoscale 10 (1), 336-341, 2018
Mandat: US National Science Foundation, US Department of Defense
Application of In Situ TEM to Investigate Irradiation Creep in Nanocrystalline Zirconium
DC Bufford, CM Barr, B Wang, K Hattar, A Haque
Jom 71, 3350-3357, 2019
Mandat: US National Science Foundation, US Department of Energy
The potential and challenges of in situ microscopy of electronic devices and materials
Z Islam, N Glavin, A Haque
Wide Bandgap Semiconductor-Based Electronics, 15-1-15-30, 2020
Mandat: US National Science Foundation
Elevated Temperature Dependence of dc Characteristics of 2-D Flake Ga2O3 Transistors
X Xia, M Xian, JS Li, F Ren, J Bae, J Kim, MAJ Rasel, A Haque, ...
SoutheastCon 2022, 190-194, 2022
Mandat: US National Science Foundation, US Department of Defense
Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN
M Xian, F Ren, MJ Tadjer, R Sharma, ME Law, PE Raad, PL Komarov, ...
Thermal Management of Gallium Nitride Electronics, 441-467, 2022
Mandat: US National Science Foundation, US Department of Defense
High-voltage high-current vertical geometry Ga2O3 rectifiers
M Xian, C Fares, P Carey IV, F Ren, M Tadjer, YT Liao, CW Chang, J Lin, ...
Oxide-based Materials and Devices XI 11281, 11-21, 2020
Mandat: US Department of Defense
Tersedia di suatu tempat: 75
Realizing large-scale, electronic-grade two-dimensional semiconductors
YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ...
ACS nano 12 (2), 965-975, 2018
Mandat: US National Science Foundation, US Department of Defense
Radiation damage in wide and ultra-wide bandgap semiconductors
SJ Pearton, A Aitkaliyeva, M Xian, F Ren, A Khachatrian, A Ildefonso, ...
ECS Journal of Solid State Science and Technology 10 (5), 055008, 2021
Mandat: US Department of Defense
Low temperature annealing of metals with electrical wind force effects
D Waryoba, Z Islam, B Wang, A Haque
Journal of materials science & technology 35 (4), 465-472, 2019
Mandat: US National Science Foundation, US Department of Energy
Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state
Z Islam, AL Paoletta, AM Monterrosa, JD Schuler, TJ Rupert, K Hattar, ...
Microelectronics Reliability 102, 113493, 2019
Mandat: US National Science Foundation, US Department of Energy, US Department of …
Two-dimensional tantalum disulfide: controlling structure and properties via synthesis
R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ...
2D Materials 5 (2), 025001, 2018
Mandat: US National Science Foundation
Electro-thermal co-design of β-(AlxGa1-x) 2O3/Ga2O3 modulation doped field effect transistors
B Chatterjee, Y Song, JS Lundh, Y Zhang, Z Xia, Z Islam, J Leach, ...
Applied Physics Letters 117 (15), 2020
Mandat: US National Science Foundation, US Department of Defense
Current density effects on the microstructure of zirconium thin films
Z Islam, B Wang, A Haque
Scripta Materialia 144, 18-21, 2018
Mandat: US National Science Foundation, US Department of Energy
Opportunities in single event effects in radiation-exposed SiC and GaN power electronics
SJ Pearton, A Haque, A Khachatrian, A Ildefonso, L Chernyak, F Ren
ECS Journal of Solid State Science and Technology 10 (7), 075004, 2021
Mandat: US National Science Foundation, US Department of Defense
Deconvoluting the Photonic and Electronic Response of 2D Materials: The Case of MoS2
K Zhang, NJ Borys, BM Bersch, GR Bhimanapati, K Xu, B Wang, K Wang, ...
Scientific reports 7 (1), 16938, 2017
Mandat: US National Science Foundation, US Department of Energy, US Department of …
Recrystallization mechanisms of Zircaloy-4 alloy annealed by electric current
D Waryoba, Z Islam, B Wang, A Haque
Journal of Alloys and Compounds 820, 153409, 2020
Mandat: US National Science Foundation, US Department of Energy
Electro-strengthening of the additively manufactured Ti–6Al–4V alloy
D Waryoba, Z Islam, T Reutzel, A Haque
Materials Science and Engineering: A 798, 140062, 2020
Mandat: US National Science Foundation, US Department of Energy
Multiscale stress–strain characterization of onion outer epidermal tissue in wet and dry states
K Kim, H Yi, MS Zamil, MA Haque, VM Puri
American Journal of Botany 102 (1), 12-20, 2015
Mandat: US Department of Energy
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
X Xia, JS Li, R Sharma, F Ren, MAJ Rasel, S Stepanoff, N Al-Mamun, ...
ECS Journal of Solid State Science and Technology 11 (9), 095001, 2022
Mandat: US National Science Foundation, US Department of Defense
In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition
Z Islam, M Xian, A Haque, F Ren, M Tadjer, N Glavin, S Pearton
IEEE Transactions on Electron Devices 67 (8), 3056-3061, 2020
Mandat: US National Science Foundation, US Department of Defense
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